Shanghai Huahong Grace Semiconductor Manufacturing Corporation

Mingyong Huang

Jun Xiao

The present application relates to the technical field of memories, in particular to a flash memory programming check circuit, comprising: a memory cell, wherein a bit line is led out from the memory cell, and a pulse sequence signal with a gradually increasing voltage amplitude is applied to the bit line, so that during a high level period of the pulse sequence signal, the memory cell undergoes a program operation, and during a low level period of the pulse sequence signal, the memory cell undergoes a read detection operation; a pulse sequence generation unit used to generate the pulse sequence signal with a gradually increasing voltage amplitude to the bit line; and a reset unit used to control, when a programming control signal starts to be generated, a voltage of the bit line to drop.

Flash memory programming check circuit

The application relates to a data reading circuit of an embedded flash memory cell. The data reading circuit a switch circuit, a current clamp circuit, a current mirror circuit, a reference current source, a precharge circuit and a comparison circuit; the switch circuit includes a transmission gate, one end of the transmission gate is connected with a drain of the embedded flash memory cell, and the other end of the transmission gate is connected with a detection end of the current clamp circuit; a response end of the current clamp circuit is connected with a data node; the current mirror circuit is connected with the reference current source and the data node; an output end of the precharge circuit is connected with the data node; one input end of the comparison circuit is connected with the data node, and the other input end is connected with reference voltage.

Data reading circuit of embedded flash memory cell

A circuit and a method for controlling operation voltage, and a storage device are provided. The circuit includes: a voltage boost unit adapted for: if receiving a first signal, performing a voltage boost process; and if receiving a second signal, stopping the voltage boost process; a voltage division unit including a plurality of different voltage division coefficients, adapted for performing a voltage division process; a comparison unit adapted for: comparing the divided voltage with a reference voltage; if the divided voltage is low, outputting the first signal; and if not, outputting the second signal; a control unit adapted for performing a descending switching operation on the voltage division coefficients; and an output unit. The establishing speed of the operation voltage is effectively controlled, and an effect on device power consumption and performance caused by the threshold voltage and variations of the threshold voltage in the working process is eliminated.

Circuit and method for controlling operation voltage, and storage device

A voltage division circuit, a circuit for controlling operation voltage and a storage device are provided. The voltage division circuit includes: a receiving transistor; a transistor group including m transistors connected in series; n type-one switches, each of which includes three terminals, the first is connected with a drain of a former one and a source of a latter one of two adjacent transistors in the transistor group, the second is connected with ground, the third is adapted for receiving a timing control signal; and n+1 type-two switches, each of which includes three terminals, the first is connected with a source of a transistor in the transistor group, the second is adapted for outputting a divided voltage, and the third is adapted for receiving the timing control signal. The voltage division circuit can save chip area, and work properly under a condition that the voltage to be divided is low.

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Shanghai, China

Mingyong Huang