Hua Hong Semiconductor (wuxi) Limited

Mingxu Fang

Yu Chen

Hualun Chen

A method for making a MOSFET includes forming a gate oxide layer on a substrate; depositing and forming a polysilicon layer on the gate oxide layer; removing the polysilicon layer and the gate oxide layer in a target area by means of dry etching. The remaining gate oxide layer forms a gate oxide of the MOSFET. The remaining polysilicon layer forms a gate of the MOSFET. The method further includes performing LDD implantation on the substrate at both sides of the gate, to form a first LDD area and a second LDD area respectively; and performing SD implantation to form a source and a drain in the substrate at both sides of the gate respectively. Before one of the steps after the depositing and forming a polysilicon layer on the gate oxide layer, fluorine ion implantation is performed.

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Wuxi, China

Mingxu Fang