Boe Technology Group Co., Ltd.

Mingxing Wang

Xue Dong

Guangcai Yuan

Zhanfeng Cao

Fei Wang

Xuan Liang

Chenyang Zhang

Ke Wang

Lei Wang

Qi Yao

Feng Qu

Yanling Han

Fuqiang Li

Zhiwei Liang

Haixu Li

Meili Wang

Muxin Di

Xuan Feng

Lizhen Zhang

Xinxin Zhao

Xiawei Yun

Jing Li

Can Wang

Shi Shu

Ke Fei Wang

Qi Qi

Xiao Lin Zhang

Yafeng Yang

Xin Gu

Qian Wu

Yapeng Li

Meng Yan

Zhen Zhang

Junwei Yan

Qingxun Zhang

Binbin Tong

Shulei Li

Mingkun Yang

A semiconductor apparatus and a method for manufacturing the semiconductor apparatus are provided. The semiconductor apparatus includes: a base substrate; a chip arranged on the base substrate, wherein the chip includes a chip main body and a plurality of terminals arranged on the chip main body; a terminal expansion layer arranged on the base substrate, the terminal expansion layer including a conductive material, and the terminal expansion layer and at least one terminal are located on a same side of the chip main body; and a plurality of expansion wires in the terminal expansion layer, wherein the plurality of expansion wires are electrically connected to the plurality of terminals, respectively, to lead out the plurality of terminals, wherein an orthographic projection of at least one expansion wire on the base substrate completely covers an orthographic projection of a terminal electrically connected to the expansion wire on the base substrate.

Semiconductor apparatus and method for manufacturing the same

A light emitting device and a light emitting apparatus are provided. The light emitting device includes at least two epitaxial structures provided in a first direction and connected in series, wherein two current diffusion layers and a transparent adhesive layer are provided between two adjacent epitaxial structures, a current diffusion layer is provided at one side of each of the two adjacent epitaxial structures, the transparent adhesive layer is provided between the two current diffusion layers, and metal nanoparticles are provided in the transparent adhesive layer.

Light emitting device and light emitting apparatus

A display substrate and a display device are provided. The display substrate includes a backplane including a plurality of pixel regions; and light emitting units arranged in one-to-one correspondence with the plurality of pixel regions. Each light emitting unit includes light emitting sub-units arranged in a plurality of rows and a plurality of columns, each row of light emitting sub-units includes a plurality of light emitting sub-units arranged along a row direction, each column of light emitting sub-units includes one light emitting sub-unit, and orthographic projections of light emitting regions of two adjacent columns of light emitting sub-units on a first straight line extending along a column direction are not overlapped; and in each light emitting unit, there is no gap between orthographic projections of the light emitting regions of the two adjacent columns of light emitting sub-units on a second straight line extending along the row direction.

Display substrate and display device

A semiconductor apparatus and a method for manufacturing the semiconductor apparatus are provided. The semiconductor apparatus includes: a base substrate; a plurality of chips arranged on the base substrate each including a chip main body and a plurality of terminals arranged thereon; a plurality of fixed connection portions arranged on the base substrate, and adjacent to the plurality of chips; a terminal expansion layer arranged on the base substrate; and a plurality of expansion wires in the terminal expansion layer and configured to electrically connect the chips, wherein an expansion wire configured to electrically connect two chips includes at least a first wire segment and a second wire segment, and the first wire segment is configured to electrically connect a terminal of a chip and a fixed connection portion adjacent to the chip, and the second wire segment is configured to connect two fixed connection portions between the two chips.

Semiconductor apparatus having expansion wires for electrically connecting chips

A driving backplane, a display panel and a display apparatus are provided. The driving backplane includes: a base substrate, and a plurality of connection electrode groups and a plurality of correction structures disposed on the base substrate, each of the connection electrode groups includes: a first connection electrode and a second connection electrode the first connection electrode and the second connection electrode are arranged on a same layer; a first gap is formed between the first connection electrode and the second connection electrode, and a first group of opposite edges includes: an edge, close to the first gap, of the first connection electrode; and an edge, close to the first gap, of the second connection electrode; a second group of opposite edges includes: an edge, far away from the first gap, of the first connection electrode; and an edge, far away from the first gap, of the second connection electrode.

Driving backplane, display panel and display apparatus

A light-emitting diode substrate, a manufacturing method thereof, and a display device are disclosed. The manufacturing method of the light-emitting diode substrate includes: forming an epitaxial layer group of M light-emitting diode chips on a substrate; transferring N epitaxial layer groups on N substrates onto a transition carrier substrate, the N epitaxial layer groups on the N substrates being densely arranged on the transition carrier substrate; and transferring at least part of N*M light-emitting diode chips corresponding to the N epitaxial layer groups on the transition carrier substrate onto a driving substrate, an area of the transition carrier substrate is greater than or equal to a sum of areas of the N substrates, M is a positive integer greater than or equal to 2, and N is a positive integer greater than or equal to 2.

Light-emitting diode substrate and manufacturing method thereof, display device

An embodiment of the present disclosure provides a light emitting diode chip, including: a light emitting functional layer including a first semiconductor layer, a light emitting layer and a second semiconductor layer which are sequentially stacked, and a second semiconductor layer including a plurality of second semiconductor patterns which are arranged at intervals; a first electrode layer including a first electrode pattern electrically coupled to the first semiconductor layer; a second electrode layer disposed on a side, away from the light emitting layer, of the second semiconductor layer and including a plurality of second electrode patterns in one-to-one correspondence with the second semiconductor patterns, and the second electrode patterns are electrically coupled to the second semiconductor patterns correspondingly. Embodiments of the present disclosure further provide a method for manufacturing a light emitting diode chip and a display device.

Light emitting diode chip and method for manufacturing the same, display device

A light-emitting diode (LED) chip includes a plurality of epitaxial structures, at least one first electrode, and a plurality of second electrodes. Any two adjacent epitaxial structures of the plurality of epitaxial structures have a gap therebetween. Each epitaxial structure includes a first semiconductor pattern, a light-emitting pattern and a second semiconductor pattern stacked in sequence. First semiconductor patterns in at least two of the plurality of epitaxial structures are connected to each other to form a first semiconductor layer. A first electrode is electrically connected to the first semiconductor layer. Each second electrode is electrically connected to the second semiconductor pattern in at least one of the plurality of epitaxial structures.

Light-emitting diode chip having a gap between epitaxial structures and method for manufacturing the same, and display device

A LED chip, including: substrate; LEDs on side of the substrate, each including first semiconductor pattern, light emission pattern, second semiconductor pattern sequentially stacked, the first semiconductor patterns of at least two LEDs being formed as single piece to constitute first semiconductor layer; at least one first electrode on side of first semiconductor layer away from the substrate and electrically coupled to first semiconductor layer; second electrodes on side of the second semiconductor patterns away from the substrate, each being electrically coupled to second semiconductor pattern of corresponding LED; pixel defining layer on side of the substrate away from LED, and having pixel openings in one-to-one correspondence with LEDs; and a color conversion pattern within at least two pixel openings, and converting light of first color emitted by the light emission pattern into light of target color other than the first color. The LED chip is Mini-LED or Micro-LED chip.

Light emitting diode chip, display device and method for manufacturing the same

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Beijing, China

Mingxing Wang