Soochow University

Mingyang Technology (Suzhou) Co., Ltd.

Mingxiang Wang

Dongli Zhang

Huaisheng Wang

Lekai Chen

Wei Jiang

Hu Zhao

Jianxiong Ni

Yanyan Chen

Ming Wu

Nannan Lv

Jinfeng Zhao

The present invention discloses a field effect transistor device for improving the problem of the short-channel effect of a field effect transistor in the prior art, comprising: an active layer, comprising a source region, a drain region, and a channel region located between the source region and the drain region; a gate provided around the channel region; and a gate insulating layer provided between the gate and the channel region; wherein when a device is turned on, an effective channel, and an equivalent source and/or equivalent drain away from the effective channel are formed in the channel region, and the field effect transistor device connects the source region and the drain region through the effective channel, and the equivalent source and/or equivalent drain to contribute an operating current.

Field effect transistor device

The present invention provides a field effect transistor device and a method for improving the short-channel effect and the output characteristics using the same. The field effect transistor device comprises an active layer comprising a source region, a drain region, and a channel region located between the source region and the drain region; when the device is turned on, an effective channel and an equivalent source and/or equivalent drain away from the effective channel are formed in the channel region, and the field effect transistor device connects the source region with the drain region through the effective channel, and the equivalent source and/or equivalent drain to form an operating current.

Field effect transistor device, and method for improving short-channel effect and output characteristic thereof

The present invention provides a single-gate field effect transistor device and a method for modulating the drive current thereof. The field effect transistor comprises an active layer, a source region and a drain region formed at two sides of the active layer, and a channel region located between the source region and the drain region. The field effect transistor device is configured as follows: when the transistor is turned off, a second channel of depletion-mode spontaneously forms in the channel region, and the second channel does not connect the source region and the drain region; when the transistor is turned on, the second channel and a first channel of the same polarity as the second channel are formed in the channel region; at least one of the first channel and the second channel injects carriers into the other channel so that current conduction occurs between the source and the drain and the carriers of the second channel contribute to the on-state current of the transistor.

Single-gate field effect transistor and method for modulating the drive current thereof

The present invention discloses a bending test apparatus and method for a flexible sheet material. The apparatus comprises a mounting table and further comprises a clamping unit and a bending shaft unit. The clamping unit comprises a clamping part. The bending shaft unit comprises a bending shaft extending in a Z-axis direction. The bending shaft has an arc-shaped sidewall for abutting against a flexible sheet material at an end thereof away from the clamping part. The clamping part moves relative to the bending shaft in a Y-axis direction. The present invention has the following advantage: During a test, a flexible sheet material is bent with a lower external strain, has a wide adjustment curvature range, and the structure is optimized.

Bending test apparatus and method for flexible sheet material

The present application discloses a method and apparatus for calculating the kink current of SOI device, which is used to solve the problem that the kink current calculation in the prior art is not accurate and is not suitable for circuit simulation. The method includes: obtaining the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current of the SOI device respectively; and calculating the kink current of the SOI device according to the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current.

Method and apparatus for calculating kink current of SOI device

Disclosed is a thin-wall bonded self-lubricating plate, the composite material structure thereof being composed of a surface self-lubricating layer, an intermediate bonding layer, and a metal backing layer. The surface self-lubricating layer includes polytetrafluoroethylene, ultrahigh molecular weight polyethylene, etc. The surface self-lubricating layer thereof is thicker than an ordinary sintered self-lubricating material, thereby reducing vibration and prolonging the service life. Components, such as bushings, gaskets, sliding plates, composite bearings and other special-shaped members, made of the thin-wall bonded self-lubricating plate, have broad application prospects in low-speed rotation and relative sliding parts of vehicles, general machinery, office furniture, etc.

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Suzhou, China

Mingxiang Wang