Applied Materials, Inc.

Mingwei Zhu

Nag B Patibandla

Zihao Yang

Daniel Lee Diehl

Hou Tee Ng

Sivapackia Ganapathiappan

Yong Cao

Zhebo Chen

Vivek Agrawal

Anantha K Subramani

Rongjun Wang

Yingdong Luo

Daihua Zhang

Byung Sung Kwak

Mohammad Kamruzzaman Chowdhury

Shane Lavan

Lisong Xu

Shriram Mangipudi

Ludovic Godet

Robert Jan Visser

Xianmin Tang

Boyi Fu

Sriskantharajah Thirunavukarasu

Omkaram Nalamasu

Karthik Elumalai

Nir Yahav

Adi De La Zerda

Vijay D Parkhe

Mark Joseph Saly

Christopher Dennis Bencher

Siddarth A Krishnan

Rutger Meyer Timmerman Thijssen

Muhammad M Rasheed

Bhaskar Jyoti Bhuyan

Thomas Knisley

Cheng-Hsiung Matt Tsai

David Masayuki Ishikawa

Sumit Subhash Patankar

Hiroyuki Takahama

Jen Sern Lew

Dinesh Saigal

Randy D Schmieding

Fred Eric Ruhland

Praburam Gopal Raja

Nag B Patibandia

Todd J Egan

Rami Hourani

Lan Yu

Yue Chen

Jinxin Fu

Edward W Budiarto

Weimin Zeng

Takashi Kuratomi

Jeffrey L Franklin

Yongmei Chen

Naamah Argaman

Sage Toko Garrett Doshay

Jingyi Yang

Fabio Pieralisi

Niranjan Ramchandra Khasgiwale

Jinyu Lu

Mengnan Zou

Liang Zhao

Thean Ming Tan

Qun Jing

Renjing Zheng

Surender Kumar Gurusamy

Tai-Chou Papo Chen

Jean Lu

Shumao Zhang

Wayne Mcmillan

Exemplary methods of fabricating high quality quantum computing components are described. The methods include removing native oxide from a deposition surface of a silicon substrate in a cleaning chamber of a processing system, and transferring the silicon substrate under vacuum to a deposition chamber of the processing system. The methods further include depositing an aluminum layer on the deposition surface of the silicon substrate in the deposition chamber, where an interface between the aluminum layer and the deposition surface of the silicon substrate is oxygen free.

High quality quantum computer components

A superconducting nanowire single photon detector (SNSPD) device includes a substrate having a top surface, an optical waveguide on the top surface of the substrate to receive light propagating substantially parallel to the top surface of the substrate, a seed layer of metal nitride on the optical waveguide, and a superconductive wire on the seed layer. The superconductive wire is a metal nitride different from the metal nitride of the seed layer and is optically coupled to the optical waveguide.

SNSPD with integrated aluminum nitride seed or waveguide layer

A method of processing an optical device is provided, including: positioning an optical device on a substrate support in an interior volume of a process chamber, the optical device including an optical device substrate and a plurality of optical device structures formed over the optical device substrate, each optical device structure including a bulk region formed of silicon carbide and one or more surface regions formed of silicon oxycarbide. The method further includes providing one or more process gases to the interior volume of the process chamber, and generating a plasma of the one or more process gases in the interior volume for a first time period when the optical device is on the substrate support, and stopping the plasma after the first time period. A carbon content of the one or more surface regions of each optical device structure is reduced by at least 50% by the plasma.

Optical device improvement

A display screen includes a backplane, an array of light-emitting diodes electrically integrated with the backplane, the array of light-emitting diodes configured to emit UV light in a first wavelength range, and a plurality of isolation walls formed on the backplane between adjacent light-emitting diodes of the array of light-emitting diodes with the isolation walls spaced apart from the light-emitting diodes and extending above the light-emitting diodes. The plurality of isolation walls include a core of a first material and a coating covering at least a portion of the core extending above the light-emitting diodes. The coating is an opaque second material having transmittance less than 1% of light in the first wavelength range.

Micro-LED displays to reduce subpixel crosstalk

A method for manufacturing micro-LED displays includes depositing a first material over a substrate having a plurality of micro-LEDs such that the plurality of micro-LEDs are covered by the first material and the first material fills gaps laterally separating the micro-LEDs, removing a portion of the first material from the gaps that laterally separate the plurality of micro-LEDs to form trenches that extend to or below light-emitting layers of the micro-LEDs, depositing a second material over the substrate such that the second material covers the first material and extends into the trenches, and removing a portion of the first and second material over the plurality of micro-LEDs to expose top surfaces of the plurality of micro-LEDs and such that isolation walls positioned in the gaps between the plurality of micro-LEDs extend vertically higher than the top surface of the first material.

Manufacturing micro-LED displays to reduce subpixel crosstalk

A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.

High critical temperature metal nitride layer with oxide or oxynitride seed layer

Embodiments of a substrate carrier are provided herein. In some embodiments, a substrate carrier includes a base plate, wherein the base plate is a thin, solid plate with no through holes or embedded components; and a plurality of raised portions extending from the base plate, wherein the plurality of raised portions include first raised portions and second raised portions, the first raised portions disposed radially inward from the second raised portions, wherein the base plate and the plurality of raised portions define pockets configured to retain a plurality of substrates, and wherein an upper surface of the second raised portions have a greater surface area than an upper surface of the first raised portions.

Substrate carrier

A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

Method of making high critical temperature metal nitride layer

A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate at a first temperature, the seed layer being a nitride of a first metal, reducing the temperature of the substrate to a second temperature that is lower than the first temperature, increasing the temperature of the substrate to a third temperature that is higher than the first temperature to form a modified seed layer, and depositing a metal nitride superconductive layer directly on the modified seed layer at the third temperature, the superconductive layer being a nitride of a different second metal.

Method for cleaning and encapsulating microLED features are disclosed. Some embodiments provide for a wet clean process and a dry clean process to remove contaminants from the microLED feature. Some embodiments provide for the encapsulation of a clean microLED feature. Some embodiments provide improved crystallinity of the microLED feature and the capping layer. Some embodiments provide improved EQE of microLED devices formed from the disclosed microLED features.

Preclean and encapsulation of microLED features

A multi-color display includes a backplane having backplane circuitry, an array of micro-LEDs electrically integrated with backplane circuitry of the backplane, a color conversion layer over each of a plurality of light emitting diodes, and a plurality of isolation walls separating adjacent micro-LEDs of the array.

Assembly of display with color conversion layer and isolation walls

A photocurable composition includes a blue photoluminescent material, one or more monomers, and a photoinitiator that initiates polymerization of the one or more monomers in response to absorption of the ultraviolet light. The blue photoluminescent material is selected to absorb ultraviolet light with a maximum wavelength in a range of about 300 nm to about 430 nm and to emit blue light. The blue photoluminescent material also has an emission peak in a range of about 420 nm to about 480 nm. The full width at half maximum of the emission peak is less than 100 nm, and the photoluminescence quantum yield is in a range of 5% to 100%.

Blue color converter for micro LEDs

A method of fabricating a multi-color display includes dispensing a photo-curable fluid over a display having an array of light emitting diodes (micro-LEDs) disposed below a cover layer. The cover has an outer surface with a plurality of recesses, and the photo-curable fluid fills the recesses. The photo-curable fluid includes a color conversion agent. A plurality of LEDs in the array are activated to illuminate and cure the photo-curable fluid to form a color conversion layer in the recesses over the activated LEDs. This layer will convert light from these LEDs to light of a first color. An uncured remainder of the photo-curable fluid is removed. Then the process is repeated with a different photo-curable fluid having a different color conversion agent and a different plurality of LEDs. This forms a second color conversion layer in different plurality of recesses to convert light from these LEDs to light of a second color.

Display formed by curing of color conversion layer in recess

Exemplary processing methods include forming a group of LED structures on a substrate layer to form a patterned LED substrate. A light absorption barrier may be deposited on the patterned LED substrate. The methods may further include exposing the patterned LED substrate to light. The light may be absorbed by surfaces of the LED structures that are in contact with the substrate layer, and the light absorption barrier. The methods may still further include separating the LED structures for the substrate layer. The bonding between the LED structures and the substrate layer may be weakened by the absorption of the light by the surfaces of the LED structures in contact with the substrate layer.

Light absorbing barrier for LED fabrication processes

Exemplary processing methods of forming an LED structure may include depositing an aluminum nitride layer on a substrate via a physical vapor deposition process. The methods may include heating the aluminum nitride layer to a temperature greater than or about 1500° C. The methods may include forming an ultraviolet light emitting diode structure overlying the aluminum nitride layer utilizing a metal-organic chemical vapor deposition or molecular beam epitaxy.

Methods and systems for UV LED structures

Growing community of inventors

San Jose, CA, United States of America

Mingwei Zhu