Lg Display Co., Ltd.

Mingu Cho

SeYeoul Kwon

Sangcheon Youn

Dojin Kim

Miae Kim

A display device is disclosed. The display device includes a substrate including first to fourth subpixels, a first buffer layer positioned on the substrate, the first buffer layer including a silicon nitride layer and a silicon oxide layer, and a thin film transistor and an organic light emitting diode positioned on the first buffer layer. Each of the first to fourth subpixels includes an emission portion and a non-emission portion. A thickness of the silicon nitride layer in the non-emission portion is greater than a thickness of the silicon nitride layer in the emission portion.

Display device

A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises a gate electrode formed on the oxide semiconductor layer such that a first surface of the oxide semiconductor layer faces the gate electrode. A source electrode and a drain electrode are electrically connected to the oxide semiconductor layer, respectively. The oxide semiconductor layer, gate electrode, source electrode and drain electrode are arranged in a coplanar transistor configuration. A light-blocking element is also arranged to shield a second surface of the oxide semiconductor layer from external light.

Thin-film transistor, method for manufacturing the same and display device comprising the same

A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises an oxide semiconductor layer, a gate electrode, a source electrode and a drain electrode formed on a substrate in a coplanar configuration. A first conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the source electrode. A second conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the drain electrode. The first conductive member and the second conductive member are arranged to decrease resistance between a channel region of the oxide semiconductor layer and the source and drain electrodes.

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Goyang-si, South Korea

Mingu Cho