Micron Technology Incorporated

Nanonex Corporation

Mingtao Li

Haitao Liu

Stephen Y Chou

Kamal M Karda

Mark Fischer

Kevin R Shea

Deepak Chandra Pandey

Hua Tan

Brett W Busch

Belford T Coursey

Jonathan T Doebler

Jennifer Lequn Liu

Linshu Kong

A semiconductor device comprises a recessed access device that includes a first pillar, a second pillar, a channel region connecting the first and second pillars, and a gate disposed over the channel region. The channel region has a width that is narrower than widths of the first pillar and the second pillar. An array of recessed access devices comprises a plurality of pillars protruding from a substrate, and a plurality of channel regions. Each channel region has a width that is less than about 10 nm and couples neighboring pillars to form a plurality of junctionless recessed access devices. A method of forming at least one recessed access device also comprises forming pillars over a substrate, forming at least a channel region coupled with the pillars, the channel region having a relatively narrow width, and forming a gate at least partially surrounding the channel region on at least three sides.

Semiconductor devices including a recessed access device and methods of forming same

A method of forming capacitors includes providing a support material over a substrate. The support material is at least one of semiconductive or conductive. Openings are formed into the support material. The openings include at least one of semiconductive or conductive sidewalls. An insulator is deposited along the semiconductive and/or conductive opening sidewalls. A pair of capacitor electrodes having capacitor dielectric there-between is formed within the respective openings laterally inward of the deposited insulator. One of the pair of capacitor electrodes within the respective openings is laterally adjacent the deposited insulator. Other aspects are disclosed, including integrated circuitry independent of method of manufacture.

Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array

Methods used during the manufacture of a semiconductor device, such as one that includes forming a plurality of vertically oriented first support features. Each feature comprises first and second sidewalls and the first support features are formed to have a first pitch. A plurality of first mask spacers are formed, wherein one first mask spacer is formed on each first support feature sidewall, and each first mask spacer comprises an exposed, vertically oriented sidewall. A plurality of vertically oriented second support features are formed, wherein one second support feature is formed on the exposed, vertically oriented sidewall of each first mask spacer, and each second support feature is separated from an adjacent second support feature by a gap. A plurality of second mask features are formed, wherein one second mask feature is formed within each gap. The first and second support features are removed, and the first and second mask spacers are left to provide an etch pattern, wherein the first and second mask features have a second pitch. The first pitch is about three times the second pitch.

Process for increasing feature density during the manufacture of a semiconductor device

A method used during the manufacture of a semiconductor device comprises the formation of a first patterned layer having individual features of a first density. Through the formation and etching of various layers, for example conformal layers and a spun-on layer, a second patterned layer results which comprises individual features of a second density, which is about three times the first density. An in-process semiconductor apparatus formed using the method, and a system comprising the semiconductor apparatus formed according to the method, is also described.

Improved apparatus for imprint lithography involves using direct fluid pressure to press a mold into a substrate-supported film. Advantageously the mold and/or substrate are sufficiently flexible to provide wide area contact under the fluid pressure. Fluid pressing can be accomplished by sealing the mold against the film and disposing the resulting assembly in a pressurized chamber. The result of this fluid pressing is enhanced resolution and high uniformity over an enlarged area.

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Boise, ID, United States of America

Mingtao Li