Southern University of Science and Technology

Mingtao Hu

Guobiao Zhang

Wang Zhang

Hongyu Yu

Yuejin Guo

Shengming Zhou

Guoxing Zhang

Guangzhao Liu

Yida Li

Xiaodong Xiang

Mei Shen

A three-dimensional (3-D) module with integrated passive components includes a plurality of vertically stacked sub-modules. Each sub-module comprises a device level comprising a high-k dielectric (e.g. ceramic) material and an interconnect level comprising a low-k dielectric (e.g. organic) material. The passive components in the device level are fired integrally, whereas the device level and the interconnect level are fired independently.

Three-dimensional module with integrated passive components

The present invention discloses a multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAM). It comprises a plurality of RRAM cells stacked above a semiconductor substrate. Each RRAM cell comprises a RRAM layer, which is switched from a high-resistance state to a low-resistance state during programming. By adjusting the programming current, the programmed RRAMs have different resistances.

Multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAM)

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Shenzhen, China

Mingtao Hu