Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Semiconductor Manufacturing International Corp.

Hunan Sany Intelligent Control Equipment Co., Ltd.

Kushan Sany Mechanical Co., Ltd.

Mingqi Li

Li Jiang

Pulei Zhu

Feng Chen

Jun Yang

Qun Shao

Xiantao Li

Qingling Wang

Fenglin Han

A method for removing polishing byproducts and a polishing device are provided. The method includes mounting a positive electrode on the center of a polishing platen and a negative electrode on an edge of the polishing platen, applying a voltage between the positive electrode and the negative electrode after a polishing process for metal is finished, and rotating the polishing platen and rinsing a polishing pad with deionized water or a chemical cleaning solution to remove polishing byproducts that are formed in the polishing process. The combination of the centrifugal force and the electromotive force increases the removal rate of the polishing byproducts.

Polishing device for removing polishing byproducts

A method for processing a wafer (in a process of manufacturing semiconductor devices) may include the following steps: using a first slurry set to perform a first chemical mechanical polishing process on the wafer, wherein the wafer includes a plurality of metal gate structures; using a second slurry set to perform a second chemical mechanical polishing process on the wafer, wherein a concentration of a slurry material in the second slurry set is less than a concentration of the slurry material in the first slurry set; performing a cleaning process on the wafer; and providing an anti-reflective coating on the wafer.

Semiconductor device manufacturing method and related semiconductor wafer

A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device uses an aluminum alloy, rather than aluminum, for a metal gate. Therefore, the surface of the high-k metal gate after the CMP is aluminum alloy rather than pure aluminum, which can greatly reduce defects, such as corrosion, pits and damage, in the metal gate and improve reliability of the semiconductor device.

Semiconductor device with an aluminum alloy gate

A polishing apparatus and exception handling method thereof is disclosed, the exception handling method of polishing apparatus includes: sending an alarm signal when an alarm is generated because of an exception during polishing; and processing a wafer in the polishing apparatus with organic acid solution according to the received alarm signal. The method and apparatus prevent the metal material from corrosion which causes device failure, when there is an alarm generated because of an exception which stops the apparatus during polishing.

Polishing apparatus and exception handling method thereof

A polishing apparatus used in chemical mechanical polishing device is provided. The polishing apparatus includes a polishing plate for holding a wafer to be polished; a polishing pad arm, one end of the polishing pad arm being fixed, another end of the polishing pad arm holding a polishing pad, and the polishing pad arm driving the polishing pad for moving relatively to the wafer; the polishing pad moving relatively to the wafer with drive from the polishing pad arm, and the polishing pad arm ensuring the polishing pad contacting the wafer during movement; and a slurry supply route for supplying polishing slurry between the polishing pad and the wafer during polishing. The present invention also provides a chemical mechanical polishing device. It makes for realizing miniaturization of a chemical mechanical polishing device, saving polishing slurry and improving utilization rate of the polishing pad in the chemical mechanical polishing device to apply the present invention.

Chemical mechanical polishing device and polishing element

The present invention discloses a method for fabricating semiconductor devices. After removing excessive aluminum to form aluminum gates through a chemical mechanical planarization (CMP) process, the exposed surfaces of the aluminum gates are oxidized with HOsolution to form a film of alumina, and the semiconductor device is cleaned.

Method of fabricating a semiconductor device

Semiconductor device having metal alloy gate and method for manufacturing the same

Method for removing polishing byproducts and polishing device

Provided is a crane jib transition structure, including a jib section, a transition section and a supporting structure. The jib section matches with the transition section, and they fixedly connect to each other. The upper end of the supporting structure fixedly connects to the upper end of the side of the jib section. The bottom end of the supporting structure fixedly connects to the bottom end of the corresponding side of the transition section. The middle part of the supporting structure fixedly connects to the connection point between the side of jib section and the corresponding side of transition section. Therefore, the crane jib transition structure can not only achieve the strength of a crane jib transition structure, but also achieve the strength and the overall stability of a crane jib, by using the supporting structure connecting to between the crane jib section and transition section.

Crane jib transition structure

A polishing method includes: mounting a wafer on a fixed abrasive polishing pad located on a polishing platen; delivering a polishing slurry to the fixed abrasive polishing pad to polish the wafer; and adsorbing abrasive particles generated during the polishing process with an electrode. The electrode has a polarity opposite to a polarity of charges of the abrasive particles. A polishing device includes a polishing platen, a fixed abrasive polishing pad, a slurry pipeline and a polarity changer having an electrode. Therefore, the abrasive particles generated during the polishing process are removed, which prevents the wafer from being scratched, thereby increasing wafer yield and improving efficiency.

Polishing method and polishing device

The present invention discloses a method of manufacturing semiconductor devices. The method includes a step of performing a chemical mechanical planarization processing on a poly-silicon layer before fabricating a poly-silicon gate such that the poly-silicon gates obtained in subsequent fabrication process are kept at the same height, which thus avoids the silicon nitride residues issue that occurs in the prior art. Therefore, the present invention is capable of enhancing product yield of semiconductor devices and improving device performances.

Method of manufacturing a semiconductor device

A method for cleaning a polishing pad includes dispensing a first amount of deionized water on the polishing pad; cleaning the polishing pad with an acidity/alkalinity solution after dispensing the first amount of deionized water on the polishing pad; rinsing the polishing pad with a second amount of deionized water after cleaning the polishing pad with the acidity/alkalinity solution; removing the acidity/alkalinity solution from the polishing pad. In a subsequent CMP process, the method includes polishing a GST material device for obtaining an improved performance of the GST material device.

Method for cleaning a polishing pad

A polishing method and a method for forming a gate are provided. The method includes forming a dummy gate on a semiconductor substrate including a sacrificial oxide layer and a polysilicon layer which covers the sacrificial oxide layer, forming spacers around the dummy gate, and successively forming a silicon nitride layer and a dielectric layer covering the silicon nitride layer. The method further includes polishing the dielectric layer until the silicon nitride layer is exposed, polishing the silicon nitride layer on a fixed abrasive pad until the polysilicon layer is exposed by using a polishing slurry with a PH value ranging from 10.5 to 11 and comprising an anionic surfactant or a zwitterionic surfactant. Additionally, the method includes forming an opening after removing the dummy gate, and forming a gate in the opening. The method eliminates potential erosion and dishing caused in the polishing of the silicon nitride layer.

Polishing method and method for forming a gate

The invention provides a method for forming a metal gate and a method for forming a MOS transistor. The method for forming a metal gate includes: providing a substrate; forming a sacrificial oxide layer and a polysilicon gate on the substrate; forming a silicon oxide layer on sidewalls of the sacrificial oxide layer and the polysilicon gate; forming a stop layer that covers the substrate; removing a part of the stop layer in the spacers; forming a second interlayer dielectric layer that covers the first interlayer dielectric layer, the spacers and the polysilicon gate; polishing the second interlayer dielectric layer to expose the spacers and the polysilicon gate; removing the polysilicon gate to form a trench; removing the sacrificial oxide layer in the trench; and forming a metal gate in the trench. The invention prevents from recesses and therefore metal bridge and metal residuals in the recesses.

Method for forming metal gate and MOS transistor

A method is provided for fabricating a high-K metal gate MOS device. The method includes providing a semiconductor substrate having a surface region, a gate oxide layer on the surface region, a sacrificial gate electrode on the gate oxide layer, and a covering layer on the sacrificial gate electrode, an inter-layer dielectric layer on the semiconductor substrate and the sacrificial gate electrode. The method also includes planarizing the inter-layer dielectric layer to expose a portion of the covering layer atop the sacrificial gate electrode, implanting nitrogen ions into the inter-layer dielectric layer until a depth of implantation is deeper than a thickness of the portion of the covering layer atop the sacrificial gate electrode and polishing the inter-layer dielectric layer to expose a surface of the sacrificial gate electrode, removing the sacrificial gate electrode, and depositing a metal gate.

Growing community of inventors

Shanghai, China

Mingqi Li