General Electric Company

Minglong Zhang

John Eric Tkaczyk

Yanfeng Du

Ira Micah Blevis

Zhaoping Wu

Dalong Zhong

Hai Chang

Santosh K Nareddy

Pei Chen

David K Moyeda

A radiation detector includes a semiconductor crystal having a first surface and a second surface opposite to the first surface, a first electrode electrically coupled with the first surface of the semiconductor crystal to allow current to flow between the first electrode and the crystal, and an insulating layer on the first surface and between the semiconductor crystal and the first electrode so as to create a partially transmissive electrical barrier between the first electrode and the crystal. The insulating layer has a thickness ranging from about 50 nanometers to about 500 nanometers.

Semiconductor crystal based radiation detector and method of producing the same

Growing community of inventors

Shanghai, China

Minglong Zhang