Samsung Electronics Co., Ltd.

Mingi Hong

Heejin Kim

Ilyoung Han

Nungpyo Hong

Choongbo Shim

In a method of determining a critical temperature of a semiconductor package, heat is applied to at least one semiconductor package. Temperatures of the semiconductor package are measured during the heating. Heights of the semiconductor package are also measured during the heating. A temperature of the semiconductor package measured at a point at which a height from among the measured heights of the semiconductor package is sharply increased so that swelling of the semiconductor package occurs is determined as the critical temperature of the semiconductor package. Thus, the critical temperature of the semiconductor package may be accurately determined.

Method of determining a critical temperature of a semiconductor package and apparatus for performing the same

Disclosed is a semiconductor package having a package-on-package (PoP) structure in which a signal region and a power region are formed separately. The semiconductor package includes a lower semiconductor package and an upper semiconductor package on the lower semiconductor package. The upper semiconductor package includes an upper package substrate, a memory chip on the upper package substrate, a wire that electrically connects the memory chip to the upper package substrate, a power connector on the upper semiconductor package, a signal connector on the bottom surface of the upper package substrate, and an upper package molding material.

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Hwaseong-si, South Korea

Mingi Hong