Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Minghwei Hong

Yen-Hsun Lin

Keng-Yung Lin

Jueinai Kwo

Hsien-Wen Wan

Kuanhsiung Chen

Ming-Han Liao

Juei-Nai Kwo

Bo-Yu Yang

Chi-Te Liang

Chao Kai Cheng

Kuan Chieh Lu

Fan-Hung Liu

Yi-Ting Cheng

Yu-Jie Hong

Tun-Wen Pi

Chien-Hua Fu

A method includes forming a semiconductive channel layer on a substrate. A dummy gate is formed on the semiconductive channel layer. Gate spacers are formed on opposite sides of the dummy gate. The dummy gate is removed to form a gate trench between the gate spacers, resulting in the semiconductive channel layer exposed in the gate trench. A semiconductive protection layer is deposited in the gate trench and on the exposed semiconductive channel layer. A top portion of the semiconductive protection layer is oxidized to form an oxidation layer over a remaining portion of the semiconductive protection layer. The oxidation layer is annealed after the top portion of the semiconductive protection layer is oxidized. A gate structure is formed over the semiconductive protection layer and in the gate trench after the oxidation layer is annealed.

Semiconductor device and manufacturing method thereof

A method for forming a material having a Perovskite single crystal structure includes alternately growing, on a substrate, each of a plurality of first layers and each of a plurality of second layers having compositions different from the plurality of first layers and forming a material having a Perovskite single crystal structure by annealing the plurality of first layers and the plurality of second layers.

Material having single crystal perovskite, device including the same, and manufacturing method thereof

A method for manufacturing a semiconductor device includes forming a semiconductor layer on a substrate, forming a high-&#x3ba; dielectric layer directly on the semiconductor layer as formed, and annealing the semiconductor layer, the high-dielectric layer, and the substrate. The semiconductor layer is a Group III-V compound semiconductor.

Semiconductor device having high-&#x3ba; dielectric layer and method for manufacturing the same

A substrate with a (001) orientation is provided. A gallium arsenide (GaAs) layer is epitaxially grown on the substrate. The GaAs layer has a reconstruction surface that is a 4&#xd7;6 reconstruction surface, a 2&#xd7;4 reconstruction surface, a 3&#xd7;2 reconstruction surface, a 2&#xd7;1 reconstruction surface, or a 4&#xd7;4 reconstruction surface. Via an atomic layer deposition process, a single-crystal structure yttrium oxide (YO) layer is formed on the reconstruction surface of the GaAs layer. The atomic layer deposition process includes water or ozone gas as an oxygen source precursor and a cyclopentadienyl-type compound as an yttrium source precursor.

Single-crystal rare earth oxide grown on III-V compound

An integrated circuit structure includes a semiconductor substrate, and a gate stack over the semiconductor substrate. The gate stack includes a high-k gate dielectric over the semiconductor substrate, and a magnetic compound over and in contact with the high-k gate dielectric. A source region and a drain region are on opposite sides of the gate stack. The gate stack, the source region, and the drain region are portions of a Metal-Oxide-Semiconductor (MOS) device.

MOS devices with ultra-high dielectric constants and methods of forming the same

A multi-layered semiconductor device and method of manufacture are provided. In an embodiment a first semiconductor layer, a first insulator layer, a second semiconductor layer, a second insulator layer, and a third semiconductor layer are formed over a substrate. A first transistor comprises the first semiconductor layer, the first insulator layer, and the second semiconductor layer, and a second transistor comprises the second semiconductor layer, the second insulator layer, and the third semiconductor layer.

Semiconductor device structure and method

Growing community of inventors

Zhubei, Taiwan

Minghwei Hong