Agency for Science, Technology and Research

Minghua Li

Wei He

Luping Shi

Fei Li

Rong Zhao

Yu Jiang

Weijie Wang

Hongxin Yang

Kok Leong Desmond Loke

Embodiments provide a selector device for selecting a memory cell. The selector device includes a first electrode; a second electrode; and a switching layer sandwiched between the first electrode and the second electrode. The switching layer includes at least one metal rich layer and at least one chalcogenide rich layer. The metal rich layer includes at least one of a metal or a metal compound, wherein metal content of the metal rich layer is greater than 50 at. %. The chalcogenide content of the chalcogenide rich layer is greater than 50 at. %.

Memory cell selector and method of operating memory cell

A method for programming a resistive memory cell is provided. The method may include providing a programming signal to the resistive memory cell. The programming signal may include an electrical pulse and a bias pulse coupled with the electrical pulse. The electrical pulse includes an electrical pulse portion, and the bias pulse includes at least two bias pulse portions, wherein the electrical pulse portion is positioned between the at least two bias pulse portions. The bias pulse includes a voltage below a threshold switching voltage of the resistive memory cell. The programming signal includes a peak voltage above the threshold switching voltage of the resistive memory cell.

Method for programming a resistive memory cell, a method and a memory apparatus for programming one or more resistive memory cells in a memory array

Growing community of inventors

Singapore, Singapore

Minghua Li