Changxin Memory Technologies, Inc.

Mingguang Zuo

Shuai Guo

Shijie Bai

The present disclosure relates to the technical field of semiconductor manufacturing, and in particular, to a memory device, and a manufacturing method and a driving method thereof. The memory device includes: a substrate; a stacked structure, where the stacked structure includes a first gate layer, a second gate layer, and interlayer isolation layers, one of the interlayer isolation layers is located between the first gate layer and the second gate layer, and another one of the interlayer isolation layers is located between the first gate layer and the substrate; and a memory structure, including a through hole penetrating the stacked structure, and a trench structure filled in the through hole. The present disclosure enables the memory device to be used as nonvolatile memory with different storage modes, thereby realizing versatility of the memory device.

Memory device, and manufacturing method and driving method thereof

Embodiments provide method for fabricating a semiconductor structure, and a semiconductor structure. The method includes: providing a substrate, a thin-film stack structure being formed on the substrate; forming a first groove and a second groove in the thin-film stack structure, and forming write transistors in the first groove, the second groove extending along a first direction, and the second groove being positioned between adjacent two of the write transistors in a second direction; removing a part of the thin-film stack structure by etching using the second groove to form a first hole and a second hole respectively, forming a write word line in the first hole, and forming a write bit line in the second hole; forming a first via on an upper surface of the thin-film stack structure, and forming a storage node in the first via; and forming a read transistor, a read bit line and a lead.

Method for fabricating semiconductor structure, semiconductor structure, and memory

The present disclosure provides a semiconductor structure and a manufacturing method thereof. The manufacturing method includes: depositing a thin-film stacked structure on a substrate; forming a first hole in the thin-film stacked structure; growing an epitaxial silicon pillar in the first hole; etching the thin-film stacked structure and the epitaxial silicon pillar along a first direction to form a first trench, the first trench passing through a center of the epitaxial silicon pillar and dividing the epitaxial silicon pillar into a first half pillar and a second half pillar; forming a first isolation layer; forming a first channel region of a first doping type, and forming a second channel region of a second doping type; and forming a gate dielectric layer and a gate conductive layer on a surface of each of the first channel region and the second channel region.

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Hefei, China

Mingguang Zuo