Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Tcl China Star Optoelectronics Technology Co., Ltd.

Other

Shenzhen China Star Optoelectronics Technology Co., Ltd.

Minggang Liu

Zhuming Deng

Wei Zhang

Macai Lu

Yong Fan

Wu Cao

Shujhih Chen

Yang Sun

Yunglun Lin

Jiangbo Yao

Nian Liu

Chiayu Lee

Chunche Hsu

The present invention discloses a micro light emitting diode display substrate and a manufacturing method thereof. The substrate includes an underlay substrate, a thin film transistor and a micro light emitting diode disposed on a top surface of the underlay substrate and connected to each other, a first metal film layer disposed on a bottom surface of the underlay substrate and at least formed with fanout circuit pattern and a side printed bonding pad. The fanout circuit pattern is connected to the side printed bonding pad, the side printed bonding pad is connected to the thin film transistor through a side wire such that after the display substrate is assembled with a bezel, a top surface display pixel region can maximally approach the bezel, to achieve bezel-less effect.

Micro light emitting diode display substrate and manufacturing method thereof

A device for transferring micro light-emitting diodes includes a collection tube and an elastic port. The collection tube has a first end and a second end arranged oppositely, and a caliber of the collection tube is greater than a diameter of the micro light-emitting diodes. The elastic port is disposed at the first end, and a caliber of the elastic port is less than the diameter of the micro light-emitting diodes. The micro light-emitting diodes are pressed into the collection tube from the elastic port. The collection tube can store the micro light-emitting diodes. The device can effectively improve transfer speed.

Device, method, and display device for transferring micro light-emitting diodes

A transfer device for a micro light-emitting diode (micro LED) of the present application includes a collecting tube and a driving device. The collecting tube has a first end and a second end disposed oppositely, and the collecting tube includes a collecting opening and a storage tube, and the collecting opening is connected to the storage tube, and the collecting opening is disposed at the first end. The driving device is disposed at the second end, and the driving device is configured to provide a driving force, wherein the driving device is configured to provide the driving force to pick up the micro LED from the collecting opening into the storage tube so that the storage tube is able to store and stack at least two micro LEDs.

Transfer device and transfer method for micro light-emitting diode (micro LED), and display device

The present invention provides a display panel, a display module, and a display device. The display panel includes a substrate and micro-LEDs. The display module achieves an extremely-narrow-bezel design by attaching a support plate to one side of a flexible drive circuit board of the display panel, bending a bending region, and attaching a bonding region to another side of the support plate. Multiple display modules are arranged in a accommodating chamber defined by a back plate of the display device and are fixed and joined to each other. Accordingly, a narrow-gap joining technology for micro-LED is realized, thus solving a problem that the micro-LED is too small in size, and realizing large-sized micro-LED displays.

Display panel, display module, and display device

The present disclosure provides a micro light emitting diode display panel, a method for fabricating the same, and a display device comprising the same. The micro light emitting diode display panel includes an active layer, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, a pixel electrode, a micro light emitting diode, and a gate insulating layer covering the active layer, the gate insulating layer, the gate electrode, the source electrode, and the drain electrode. The light shielding layer blocks light emitted by the micro light emitting diode from being incident on the thin film transistor, thereby reducing influence of the light emitted by the micro light emitting diode light on the thin film transistor.

Micro light emitting diode display panel, method for fabricating same, and display device

A display device and a method of manufacturing thereof are provided. A display device includes an array substrate and a pixel electrode disposed on the array substrate. The pixel electrode includes a soldering region, a non-soldering region, a transparent conductive oxide layer formed on the array substrate, a first metal electrode layer disposed on the transparent conductive oxide layer of the soldering region and the non-soldering region, a second metal protective layer disposed on the first metal electrode layer of the non-soldering region, and a micro LED chip including a pin correspondingly soldered on the first metal electrode layer of the soldering region. The metal electrode layer easily reacted with the organic solvent or the organic film to cause residue or defects can be improved, and the first metal electrode layer is merely retained to provide a solder joint for soldering the micro LED chip without affecting subsequent processes.

Display device and method of manufacturing thereof

The present disclosure relates to a manufacturing method of colorful Micro-LEDs. The method includes: bringing the array of the blue-light Micro-LEDs into contact with a first-color photosensitive solution and a second-color photosensitive solution; turning on first preset blue-light Micro-LEDs and the second preset blue-light Micro-LEDs of the array for conducting polymerization on the first and the second preset blue-light Micro-LEDs to form at least one lens. After the lens are formed, the first preset blue-light Micro-LEDs emit the light beams of the first color, the second preset blue-light Micro-LEDs emit the light beams of the second color, and the remaining blue-light Micro-LEDs emit the blue light beams to constitute three colors so as to obtain the colorful Micro-LEDs. In addition, the present disclosure also relates to a display module having the above array of the Micro-LEDs, and a terminal including the display module.

Manufacturing method of colorful Micro-LED, display modlue and terminals

The present invention provides an array substrate and a manufacturing method thereof. The array substrate includes: a backing plate, a TFT layer arranged on the backing plate, a protective layer covering the backing plate and the TFT layer, a color resist layer arranged on the protective layer, an organic planarization layer set on and covering the color resist layer and the protective layer, and a BPS light-shielding layer arranged on the organic planarization layer. The BPS light-shielding layer includes: a black matrix and a main photo spacer and a sub photo spacer arranged on the black matrix. The organic planarization layer is formed with a first recess in an area thereof that corresponds to at least a part of the black matrix and the first recess is filled up with the black matrix. By forming the first recess in the organic planarization layer and filling the first recess with the black matrix, the extent by which the black matrix projects beyond a pixel area can be reduced to prevent the black matrix from forming a barrier wall between sub-pixels that affects flowability of liquid crystal and to ensure the quality of a liquid crystal boxing process and the displaying performance of a device.

Array substrate and manufacturing method thereof

An array substrate, a display panel and a method of manufacturing array substrate are provided. The array substrate, comprising first substrate and data line, data line positioned on first substrate; auxiliary electrode positioned on first substrate, auxiliary electrode for electrically connecting to color filter, vertical projection of auxiliary electrode on first substrate does not intersect with data line; insulating layer positioned on surface of auxiliary electrode which away first substrate, insulating layer has hole; and shielding electrode comprises main section and protrusion section are integrated, main section is located on lateral side of data line which away first substrate, and vertical projection of main section on first substrate is covering data line, protrusion section is positioned on insulating layer, and protrusion section pass through hole and contacting to auxiliary electrode. It achieves to highly product yield and saving production costs.

Array substrate, display panel and method of manufacturing array substrate

A display panel and a manufacturing method thereof are provided. The display panel includes a color resist layer, a protective layer and a light-shielding layer. The color resist layer is formed with a first channel having a first color resist block and a second color resist block therein. The light-shielding layer has a base, a first protrusion corresponding to the first color resist block, and a second protrusion corresponding to the second color resist block. The first protrusion is configured as a main photo spacer. The second protrusion is configured as a sub photo spacer. Surface area of the first color resist block is greater than surface area of the second color resist block.

Display panel having height difference between photo spacers and manufacturing method thereof

A display panel and a manufacturing method thereof are provided. The display panel includes a color resist layer, a protective layer and a light-shielding layer. The color resist layer is formed with a first channel having a first color resist block and a second color resist block therein. The light-shielding layer has a base, a first protrusion corresponding to the first color resist block, and a second protrusion corresponding to the second color resist block. The first protrusion is configured as a main photo spacer. The second protrusion is configured as a sub photo spacer. The protective layer is formed with a second channel corresponding to the second color resist block. The sub photo spacer is directly connected to the second color resist block.

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Shenzhen, China

Minggang Liu