Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

Ming-Yuan Wu

Kong-Beng Thei

Chiung-Han Yeh

Harry Chuang

Mong-Song Liang

Che-Yuan Hsu

Hsin-Chieh Huang

Yu-Wen Wang

Che-Lun Chang

Harry-Hak-Lay Chuang

Tzung-Chi Lee

Ka-Hing Fung

Chih-Tang Peng

Da-Wen Lin

Jiun-Ming Kuo

Yi-Shien Mor

Ming-Jie Huang

Su-Chen Lai

Ji-Yin Tsai

Yu-Shan Lu

Yen-Po Lin

Chen-Pin Hsu

Chien-Hung Wu

Pin-Chuan Su

Hong-Dyi Chang

Yu-Lin Tsai

Tzu Kai Lin

Min Jiao

Shiao-Shin Cheng

Hsu-Chieh Cheng

Harry Hak-Lay Chuang

Hak-Lay Chuang

Hou-Ju Li

Yi-Ting Fu

Gary Shen

Chun-Liang Shen

Ching-Han Yeh

Kuo Cheng-Cheng

Che-Yuan Hsu, Deseased

Kuo Cheng Cheng

Chiun-Han Yeh

Wei-Yuan Jheng

Chen-Yu Hsieh

A method includes forming a fin protruding from a substrate, forming a first dielectric feature adjacent to the fin over the substrate, forming a cladding layer over the fin and the first dielectric feature, and removing a portion of the cladding layer to form an opening. The opening exposes the first dielectric feature. The method further includes forming a second dielectric feature adjacent to the cladding layer, the second dielectric feature filling the opening, forming a dummy gate stack over the fin and the second dielectric feature, forming source/drain (S/D) features in the fin adjacent to the dummy gate stack, and replacing the dummy gate stack and the cladding layer with a metal gate stack. The second dielectric feature divides the metal gate stack.

Method of fabricating a gate cut feature for multi-gate semiconductor devices

Semiconductor devices and methods are provided. In an embodiment, a method includes providing a workpiece including a first hard mask layer on a top surface of a substrate, performing an ion implantation process to form a doped region in the substrate, after the performing of the ion implantation process, annealing the workpiece at temperature T. The method also includes selectively removing the first hard mask layer, after the selectively removing of the first hard mask layer, performing a pre-bake process at temperature T, and, after the performing of the pre-bake process, epitaxially growing a vertical stack of alternating channel layers and sacrificial layers on the substrate, where the temperature Tis lower than the temperature T

Semiconductor devices with low leakage current and methods of fabricating the same

A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.

CMP process and methods thereof

A method includes forming a doped region on a top portion of a substrate, forming a first epitaxial layer over the substrate, forming a recess in the first epitaxial layer, the recess being aligned to the doped region, performing a surface clean treatment in the recess, the surface clean treatment includes: oxidizing surfaces of the recess to form an oxide layer in the recess, and removing the oxide layer from the surfaces of the recess, and forming a second epitaxial layer in the recess.

Fin field-effect transistor device and method

A method includes forming a fin structure on a substrate, forming a dummy gate structure wrapped around the fin structure, depositing an Interlayer Dielectric (ILD) layer over the fin structure, removing the dummy gate structure to expose a portion of the fin structure, and performing an etching process on the portion of the fin structure to reduce a width of the portion of the fin structure.

FinFET device with a reduced width

A backpack structure is adapted to provide a storage space, and integrated with a tent structure. The backpack body has a right connection portion and a left connection portion to connect the left sidewall and the right sidewall, wherein the connections are pins, buttons, strips or velcros. The tent structure is stored in the compartment of the backpack body, or the left sidewall and the right sidewall. The tent structure includes a tent base, a left tent portion and a right tent portion. The compartment may has pads, made of cushioning materials, such as foam, to replace the camping mat, for rest. Therefore, the backpack structure of the invention is light for the users of outdoor activities. Moreover, the backpack structure may combine with a trolley structure for drawing easily, or the backpack structure may be designed as a luggage suitcase.

Backpack structure integrated with a tent structure therein

A device comprises a substrate comprising a first portion and a second portion separated by an isolation region, a first gate structure over the first portion, a first drain/source region and a second drain/source region in the first portion and on opposite sides of the first gate structure, wherein the first drain/source region and the second drain/source have concave surfaces, a second gate structure over the second portion and a third drain/source region and a fourth drain/source region in the second portion and on opposite sides of the second gate structure, wherein the third drain/source region and the fourth drain/source have the concave surfaces.

FinFET contact structure and method for forming the same

A device having a gate where the profile of the gate provides a first width at a top region and a second width at a bottom region is described. The gate may include tapered sidewalls. The gate may be a metal gate structure.

Integrated circuit metal gate structure having tapered profile

A semiconductor device is provided which includes a semiconductor substrate having a first region and a second region, the first and second regions being isolated from each other, a plurality of transistors formed in the first region, an alignment mark formed in the second region, the alignment mark having a plurality of active regions in a first direction, and a dummy gate structure formed over the alignment mark, the dummy gate structure having a plurality of lines in a second direction different from the first direction.

Photo alignment mark for a gate last process

A LED lamp structure includes a LED emitting module and a radiator module. The radiator module includes a holder with an elastic slice to connect electrically to a driver unit for supplying power. The driver unit may be disposed in the radiator module or within the LED emitting module. Therefore, the structure of the LED lamp is simplified. The modules can be replaced when they break down, without having to discard the whole set of LED lamp, thus eliminating the unnecessary waste, in achieving cost-effectiveness and environment protection.

Modular LED lamp structure with replaceable modules

An outdoor LED lighting device includes a casing, a light emitting module, a driver module and a supporter. This LED lighting device may be installed easily by the supporter in a housing of the conventional outdoor lamp without having to discard the whole set of the conventional outdoor lamp, thus eliminating the unnecessary waste, in achieving cost-effectiveness and environment protection. Also, the LED lighting device has good characteristics of thermal dissipation and waterproof. Moreover, the solar battery module may be included to lower environmental impact without carbon dioxide emissions during power generation.

Outdoor LED lighting device structure with easy installation features

A communication device for a multiple language translation system is disclosed. The communication device allows users to communicate with others using their own preferred language and the communication device provides a translation for each user in their preferred language. The communication device comprises a wireless transceiver for communicating with other users, networks, and the Internet. Operation switches are provided for controlling operation of the communication device. Signal indicators visually show status or conditions. A user hears the translation via an earphone or sees the translation on a display. A remote control allows the communication device to be controlled remotely.

Communication device for multiple language translation system

Growing community of inventors

Hsinchu, Taiwan

Ming-Yuan Wu