Apple Inc.

Ming Yuan Tsai

Paul Aurelio Martinez

Albert Wang

Curtis C Mead

Martin Schauer

Won Seop Choi

Robert W Schlub

Ruben Caballero

Matthew A Mow

Tyler S Bushnell

Jason C Sauers

Liang Han

Thomas E Biedka

Cheung-Wei Lam

Scott D Morrison

Federico Pio Centola

Gang Ning

Tracey L Chavers

Chirag V Shah

Behzad Reyhani Masoleh

Multilayer ceramic capacitor structures may include structural arrangements, materials, and/or substrate modifications that can improve the reliability of the capacitor for long-term usage when faced with environmental stress. Embodiments may implement reduced entryways in the termination patterns of the capacitor to decrease damage potential due to exposure of moisture. Embodiments may implement structures that decrease interfaces with different physical characteristics, which may lead to a reduction in the formation of micro-fractures during regular usage. Methods of manufacture for the features that improve reliability are also detailed.

Reliable capacitor structures

Monolithic capacitor structures having a main capacitor and a vise capacitor are discussed. The vise capacitor provides to the monolithic capacitor structure reduced vibrations and/or acoustic noise due to piezoelectric effects. To that end, vise capacitor may cause piezoelectric deformations that compensate the deformations that are caused by the electrical signals in the main capacitor. Embodiments of these capacitor structures may have the main capacitor and the vise capacitor sharing portions of a rigid dielectric. Electrical circuitry that employs the vise capacitor to reduce noise and/or vibration in the monolithic capacitor structures is also described. Methods for fabrication of these capacitors are discussed as well.

Multilayer ceramic capacitor with low acoustic noise

Capacitor devices having multiple capacitors with similar nominal capacitances are described. The capacitors may be multilayer ceramic capacitors (MLCCs) and may be fabricated employing class 2 materials. The arrangement of the electrodes in the device may reduce relative variations between the capacitors of the device. The capacitor devices may be allow high performance and compact electrical circuits that may employ matched capacitors.

Matched ceramic capacitor structures

Capacitor devices with electrodes that are geometrically arranged to reduce parasitic capacitances are described. The capacitors may be multilayer ceramic capacitor (MLCC) structures in which certain electrodes may have a clearance from a capacitor structure wall, such as top wall. In circuits and devices where that particular capacitor wall may be placed near a shielding structure, the clearance may reduce unintended parasitic capacitances between the shield structure and the electrodes. As a result, the shield structures may be placed closer to the electronic components, which may allow circuit boards and electronic devices with a lower profile.

Pseudo-shielded capacitor structures

A system includes a circuit board, an inductor including windings mounted on the circuit board, and a plurality of magnetic field containment devices. Each magnetic field containment device includes an independent electrical circuit that is not directly electrically connected via a conductor to any other magnetic field containment device. Each magnetic field containment device also includes a material of a certain relative permeability. Each magnetic field containment device at least partially surrounds the inductor and, in operation, at least partially contains a magnetic B-Field generated by electrical current in the windings of the inductor. The plurality of magnetic field containment devices, in operation, enables a certain saturation current in the inductor.

Magnetic field containment inductors

A test system for testing an antenna tuning element is provided. The test system may include a tester, a test fixture, and a probing structure. The probing structure may include probe tips configured to mate with corresponding solder bumps formed on a device under test (DUT) containing an antenna tuning element. The DUT may be tested in a shunt or series configuration. The tester may be electrically coupled to the test probe via first and second connectors on the test fixture. An adjustable load circuit that is coupled to the second connector may be configured in a selected state so that a desired amount of electrical stress may be presented to the DUT during testing. The tester may be used to obtain measurement results on the DUT. Systematic effects associated with the test structures may be de-embedded from the measured results to obtain calibrated results.

Methods and apparatus for performing wafer-level testing on antenna tuning elements

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San Jose, CA, United States of America

Ming Yuan Tsai