Applied Materials, Inc.

Ming-Yuan Chuang

Anchuan Wang

Karthik Janakiraman

Rui Cheng

Zihui Li

Takehito Koshizawa

Krishna Nittala

Chia-Ling Kao

Russell Chin Yee Teo

Xiawan Yang

Menghui Li

Susumu Shinohara

Juan Guo

Qu Jin

Exemplary processing methods may include depositing a boron-containing material or a silicon-and-boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The methods may include etching portions of the boron-containing material or the silicon-and-boron-containing material with a chlorine-containing precursor to form one or more features in the substrate. The methods may also include removing remaining portions of the boron-containing material or the silicon-and-boron-containing material from the substrate with a fluorine-containing precursor.

Integration processes utilizing boron-doped silicon materials

Growing community of inventors

Boise, ID, United States of America

Ming-Yuan Chuang