Taiwan Semiconductor Manufacturing Comp. Ltd.

Ming-Yu Fan

Jong-I Mou

Chi-Ming Yang

Chun-Lin Louis Chang

Jo Fei Wang

Hsin-Hsien Wu

Jun-Lin Yeh

Andy Tsen

Jih-Jse Lin

Zin-Chang Wei

Chyi-Shyuan Chern

Jo-Fei Wang

Wang Jo Fei

Jill Wang

Chih-Wei Hsu

Chyi Shyuan Chern

Sunny Wu

Po-Feng Tsai

Ming-Yeon Hung

An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.

Multi-zone temperature control for semiconductor wafer

An apparatus includes a process chamber configured to perform an ion implantation process. A cooling platen or electrostatic chuck is provided within the process chamber. The cooling platen or electrostatic chuck is configured to support a semiconductor wafer. The cooling platen or electrostatic chuck has a plurality of temperature zones. Each temperature zone includes at least one fluid conduit within or adjacent to the cooling platen or electrostatic chuck. At least two coolant sources are provided, each fluidly coupled to a respective one of the fluid conduits and configured to supply a respectively different coolant to a respective one of the plurality of temperature zones during the ion implantation process. The coolant sources include respectively different chilling or refrigeration units.

The present disclosure provides a semiconductor manufacturing method. The method includes performing a first process to a first plurality of semiconductor wafers; determining a sampling rate to the first plurality of semiconductor wafers based on process quality; determining sampling fields and sampling points to the first plurality of semiconductor wafers; measuring a subset of the first plurality of semiconductor wafers according to the sampling rate, the sampling fields and the sampling points; modifying a second process according to the measuring; and applying the second process to a second plurality of semiconductor wafers.

Advanced process control with novel sampling policy

A method of advanced process control (APC) for semiconductor fabrication is provided. The method includes providing a present wafer to be processed by a semiconductor processing tool, providing first data of previous wafers that have been processed by the semiconductor processing tool, decoupling noise from the first data to generate second data, evaluating an APC performance based on proximity of the second data to a target data, determining a control parameter based on the APC performance, and controlling the semiconductor processing tool with the control parameter to process the present wafer.

Method and system for tuning advanced process control parameters

System and method for implementing wafer acceptance test ('WAT') advanced process control ('APC') are described. In one embodiment, the method comprises performing a key process on a sample number of wafers of a lot of wafers; performing a key inline measurement related to the key process to produce metrology data for the wafers; predicting WAT data from the metrology data using an inline-to-WAT model; and using the predicted WAT data to tune a WAT APC process for controlling a tuning process or a process APC process.

System and method for implementing a wafer acceptance test ('WAT') advanced process control ('APC') with novel sampling policy and architecture

A method for monitoring overlay of a direct-write system. The method includes providing a substrate having a pattern formed thereon by the direct-write system, generating data associated with the substrate pattern, decomposing the data by applying a transformation matrix, and determining an overlay index based on the decomposed data, the overlay index corresponding to a variation component of the substrate pattern relative to a target pattern.

Method and system of monitoring E-beam overlay and providing advanced process control

A reticle position detection system which detects an abnormal position of a reticle in order to prevent damage to the reticle by a reticle fork or pre-alignment unit used to orient the reticle for subsequent internalization into a process tool or other equipment. The reticle position detection system includes a laser beam generator provided on one side of the reticle and a laser beam sensor provided on the opposite side of the reticle. The laser beam generator emits a laser beam which is received by the laser beam sensor in the event that the reticle is correctly positioned for engagement by a reticle fork or pre-alignment unit.

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Hsinchu County, Taiwan

Ming-Yu Fan