Taiwan Semiconductor Manufacturing Comp. Ltd.

Ming-Ying Tsai

Ming-Hui Li

Ta-wei Sung

Chia-Cheng Liu

A semiconductor structure includes a gate structure over a substrate. The semiconductor structure includes an inter-layer dielectric (ILD) over the substrate, wherein an upper portion of the ILD has a higher concentration of silicon atoms than a bottom portion of the ILD.

Semiconductor structure including inter-layer dielectric

An ion implanting method includes providing a gas having a bonding energy ranged from about 220 kJ/mol to about 450 kJ/mol; ionizing the gas to form a plurality of types of ions; and directing at least one of the types of the ions to implant a substance. The gas includes at least one of NH, CHNH, CHNH, CFCland C(CH3)F.

Ion implanting method

A method of fabricating a semiconductor structure. The method includes forming a sacrificial gate structure, depositing a dielectric material, and implanting the dielectric material using a silicon cluster gas. The silicon cluster gas has two or more silicon atoms.

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Hsinchu, Taiwan

Ming-Ying Tsai