United Microelectronics Corp.

Ming-Yen Chien

Chin-Cheng Chien

Tsai-Fu Hsiao

Hsiang-Ying Wang

Chao-Chun Chen

A method of forming a MOS transistor, in which, a co-implantation is performed to implant a carbon co-implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect, and the carbon co-implant is from a precursor comprising CO or CO.

Method of forming a MOS transistor

A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of C, Chd xH, and (CH), wherein x is a number of 1 to 10, y is a number of 4 to 20, and n is a number of 1 to 1000.

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Kao-Hsiung Hsien, Taiwan

Ming-Yen Chien