Taiwan Semiconductor Manufacturing Comp. Ltd.

Iac Search and Media, Inc.

Ming Xiang Li

Dun-Nian Yaung

Kuo-Ming Wu

Yi-Chun Lin

Apostolos Gerasoulis

Tomasz Imielinski

Wan-Hua Huang

Cheng-Eng D Chen

Alessio Signorini

Yufei Pan

Yu-Fei Huang

Jiankuan Ye

Edward Wan

Jacob Chen

An interconnect structure and a method of forming the interconnect structure are provided. Two wafers (and/or dies) are bonded together. A multi-via interconnect structure is formed extending from a backside of a first substrate to interconnect structures in the metallization layers on the first integrated circuit and the second integrated circuit. The multi-via interconnect structure may be formed by thinning a first substrate of a first wafer and forming a first opening through the first substrate. A second opening extends from the first opening to a first interconnect structure on the first wafer, and a third opening extends from the first interconnect structure on the first wafer to a second interconnect structure on the second wafer. The first, second, and third openings are filled with a conductive material, thereby forming a multi-via interconnect structure.

Multi-via interconnect structure and method of manufacture

In a method for a direct answer for search, a search query is received over a network, one or more answer entities are determined from one or more answer candidate snippets, with an answer candidate snippet having at least a portion of content available over the network for an answer candidate, a content identifier is determined for an answer candidate, a title is tokenized for the content identifier, a comparison is performed between a vector of tokens for the title and a vector of the one or more answer entities, an indicator of the relevance is adjusted for the content identifier in accordance with the comparison, and at least one answer candidate snippet is sent for a response to the search query.

Method and system for determining a relevant content identifier for a search

A semiconductor structure includes a semiconductor substrate; a first well region of a first conductivity type in the semiconductor substrate; a metal-containing layer on the first well region, wherein the metal-containing layer and the first well region form a Schottky barrier; and a first heavily doped region of the first conductivity type in the first well region, wherein the first heavily doped region is horizontally spaced apart from the metal-containing layer.

Integrated Schottky diode and power MOSFET

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San Jose, CA, United States of America

Ming Xiang Li