Powerchip Technology Corporation

Ming-Wei Chen

Chih-Ping Chung

Ming-Yu Ho

Min-Hui Chen

An image sensor device includes a substrate having a pixel array region, isolation structures in the substrate separating pixel regions from one another in the pixel array region, a photo-sensing region in each of the pixel regions, and a reflective cavity structure in the substrate within each of the pixel region. The reflective cavity structure continuously extends from a bottom of the isolation structure to a deeper central portion of each of the pixel regions, thereby forming a dish-like profile. The reflective cavity structure has a reflective index smaller than that of the substrate.

Image sensor device

A CMOS image sensor unit and a method for fabricating the same are described. The image sensor unit includes a photodiode, a transfer gate, a reset gate, a source follower gate, a floating drain region between the transfer gate and the reset gate, and a PIP capacitor. The lower poly-Si electrode of the PIP capacitor is electrically connected with the floating drain region and the source follower gate to also serve as an interconnect between the floating drain region and the source follower gate. The fabrication method includes forming contact plugs on the floating drain region and the source follower gate, and then forming a PIP capacitor whose lower poly-Si electrode is connected with each contact plug.

Growing community of inventors

Changhua County, Taiwan

Ming-Wei Chen