Macronix International Co., Ltd.

Ming-Tsung Wu

Shih-Ping Hong

Han-Hui Hsu

Chun-Min Cheng

Yu-Chung Chen

An-Chi Wei

Ta-Hung Yang

Chun-Ling Chiang

Kuo-Liang Wei

Ching-Hsiung Li

A semiconductor structure for three-dimensional memory device and a manufacturing method thereof are provided. The semiconductor structure is disposed on the substrate and has a plurality of openings penetrating through the semiconductor structure and extending into the substrate. The semiconductor structure includes a substrate, a stacked structure and an epitaxial layer. The stacked structure includes insulating layers and gate layers stacked alternatively. Each of the plurality of openings includes a first portion located above the surface of the substrate and a second portion located below the surface of the substrate. The aspect ratio of the second portion is more than 1. The epitaxial layer is disposed in each of the plurality of openings. The top surface of the epitaxial layer is between the top surface and the bottom surface of the i-th insulating layer as counted upward from the substrate, wherein i&#x2265;2.

Semiconductor structure and manufacturing method thereof

A NAND-based non-volatile memory contact structure includes a trench located adjacent to layered alternating conducting and insulating layers, the layers lining sides and bottom of the trench. A portion of the trench is removed to expose a surface in which electrical connections to the conducting layers are provided on one level.

Contact structure for NAND based non-volatile memory device and a method of manufacture

A patterning method is provided. First, a substrate having an objective material layer thereon is provided. Thereafter, a mask layer is formed on the objective material layer. Afterwards, a patterned layer is formed over the mask layer, wherein a material of the patterned layer includes a metal-containing substance. Then, the mask layer is patterned to form a patterned mask layer. Further, the objective material layer is patterned, using the patterned mask layer as a mask.

Patterning method

An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers.

Isolation structure and formation method thereof

A method of fabricating metal film stacks is described that reduces or eliminates adverse effects of photolithographic misalignments. A bottom critical dimension is increased by removal of a bottom titanium nitride barrier.

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Shoufong, Taiwan

Ming-Tsung Wu