Globalfoundries Singapore Pte. Ltd.

Ming Tsang Tsai

Eng Huat Toh

Shyue Seng Tan

Bin Liu

Kiok Boone Elgin Quek

Khee Yong Lim

A sensor device may include a substrate, first and second source regions, first and second drain regions, first and second channel regions, and first and second gate structures disposed over the first and second channel regions, respectively. The source regions and drain regions may be at least partially disposed within the substrate. The first and second source regions may have first and second source resistances, respectively, and the second source resistance may be higher than the first source resistance. The first gate structure may receive a solution, and a change in pH in the solution may cause a change in a first current flow through the first channel region. In turn, the second current flow through the second channel region may change to compensate for the change in the first current flow to maintain a constant current flow through the sensor device.

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Singapore, Singapore

Ming Tsang Tsai