Taiwan Semiconductor Manufacturing Comp. Ltd.

Ming-Te Liu

Ya-Chen Kao

Chun-Jung Lin

Wen-Cheng Chen

Sheng-Huang Huang

Kuo-Feng Huang

Chih-Huang Lai

Cheng-Yuan Tsai

Chih-Ming Chen

Yu-Jen Wang

Chung-Yi Yu

Tien-Wei Chiang

One method includes forming an anti-ferromagnetic layer on a substrate. A ferromagnetic layer may be formed on the anti-ferromagnetic layer. The ferromagnetic layer includes a first, second and third portions where the second portion is located between the first and third portions. A first ion irradiation is performed to only one portion of the ferromagnetic layer. A second ion irradiation is performed to another portion of the ferromagnetic layer.

Method of fabricating a magnetoresistive random access structure

MTJ stack structures for an MRAM device include an MTJ stack having a pinned ferromagnetic layer over a pinning layer, a tunneling barrier layer over the pinned ferromagnetic layer, a free ferromagnetic layer over the tunneling barrier layer, a conductive oxide layer over the free ferromagnetic layer, and an oxygen-based cap layer over the conductive oxide layer.

Structure and method for a MRAM device with an oxygen absorbing cap layer

A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second ferromagnetic layer includes a first portion being magnetically free and positioned within the first region; a second portion magnetically pinned to a first direction and positioned within a second region of the substrate, the second region contacting the first region from a first side; and a third portion magnetically pinned to a second direction and positioned within a third region of the substrate, the third region contacting the first region from a second side.

Domain wall assisted spin torque transfer magnetresistive random access memory structure

A magnetoresistive random access memory (MRAM) cell includes a magnetic tunnel junction (MTJ), a top electrode disposed over the MTJ, a bottom electrode disposed below the MTJ, and an induction line disposed to one side of the MTJ. The induction line is configured to induce a perpendicular magnetic field at the MTJ.

Magnetoresistive random access memory and method of making the same

Apparatus and methods are disclosed herein for a reverse-connection STT MTJ element of a MRAM to overcome the source degeneration effect when switching the magnetization of the MTJ element from the parallel to the anti-parallel direction. A memory cell of a MRAM having a reverse-connection MTJ element includes a switching device having a source, a gate, and a drain, and a reverse-connection MTJ device having a free layer, a fixed layer, and an insulator layer interposed between the free layer and the fixed layer. The free layer of the reverse-connection MTJ device is connected to the drain of the switching device and the fixed layer is connected to a bit line (BL). The reverse-connection MTJ device applies the lower Icapability of the memory cell caused by the source degeneration effect to the less stringent I(AP-&#x3e;P) while preserving the higher Icapability for the more demanding I(P-&#x3e;AP).

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Taipei, Taiwan

Ming-Te Liu