Vishay General Semiconductor, Inc.

Ming-Tai Chiang

Yih-Yin Lin

Chih-Ping Peng

Wan-Lan Chiang

Shih-Kuan Chen

Ya-Chin King

Sheng-Huei Dai

Hai-Ning Wang

A semiconductor device such as a Zener diode includes a first semiconductor material of a first conductivity type and a second semiconductor material of a second conductivity type in contact with the first semiconductor material to form a junction therebetween. A first oxide layer is disposed over a portion of the second semiconductor material such that a remaining portion of the second semiconductor material is exposed. A polysilicon layer is disposed on the exposed portion of the second semiconductor material and a portion of the first oxide layer. A first conductive layer is disposed on the polysilicon layer. A second conductive layer is disposed on a surface of the first semiconductor material opposing a surface of the first semiconductor material in contact with the second semiconductor material.

Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage current

Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current

A semiconductor junction device includes a substrate of low resistivity semiconductor material having a preselected polarity. A tapered recess extends into the substrate and tapers inward as it extends downward from an upper surface of the substrate. A semiconductor layer is disposed within the recess and extends above the upper surface of the substrate. The semiconductor layer has a polarity opposite from that of the substrate. A metal layer overlies the semiconductor layer.

Low voltage transient voltage suppressor with tapered recess extending into substrate of device allowing for reduced breakdown voltage

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Ming-Tai Chiang