Epistar Corporation

Ming-Ta Chin

Yi-Ching Lee

Chih-Chiang Lu

Yi-Chieh Lin

Rong-Ren Lee

Kuo-Feng Huang

Yu-Ren Peng

Ming-Siang Huang

Chia-Hung Lin

Shih-Chang Lee

Cheng-Hsing Chiang

Shih-Hao Cheng

Cheng-Long Yeh

Shih-Nan Yen

Yen-Chun Tseng

Jui-Che Sung

Min-Hsun Hsieh

Ta-Cheng Hsu

Ya-Ju Lee

Yen-Wen Chen

Wu-Tsung Lo

Shih-Pang Chang

Chung-Yuan Li

Ping-Fei Shen

Ching-Jen Wang

A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure. Each semiconductor pair includes a barrier layer and a well layer and includes the first dopant. The active region does not include a nitrogen element. A doping concentration of the first dopant in the first semiconductor structure is higher than a doping concentration of the first dopant in the active region.

Semiconductor device and semiconductor component including the same preliminary class

A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.

Semiconductor device and semiconductor component including ihe same

A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.

Light-emitting device with tunnel junction

A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength &#x3bb; nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8&#x3bb;) volt and (1240/0.5&#x3bb;) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.

Light-emitting device

A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer emitting first light having a peak wavelength &#x3bb; nm; and an adjusting element stacked electrically connected to the active layer in series for tuning a forward voltage of the light-emitting device; wherein the forward voltage of the light-emitting device is between (1240/0.8&#x3bb;) volt and (1240/0.5&#x3bb;) volt.

Light-emitting device with adjusting element

A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [01] or [01] from [100], or toward [011] or [0] from [00] so that the upper surface of the semiconductor substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.

Semiconductor light-emitting device and fabrication method thereof

A semiconductor light-emitting device includes a substrate, a first cladding layer over the substrate, an active region on the first cladding layer, and a second cladding layer on the active region, wherein the active region includes a first type barrier layer that is doped and a second type barrier layer that is undoped, the first type barrier layer being closer to the first cladding layer than the second type barrier layer.

Semiconductor light-emitting device

Growing community of inventors

Hsinchu, Taiwan

Ming-Ta Chin