Ford Global Technolgoies, LLC

Ming Su

Michael W Degner

Edward Chan-Jiun Jih

Guangyin Lei

Jun Kikuchi

Tienli Wang

A power semiconductor device is comprised of a plurality of zones having similar structure. Each of the zones may be characterized by a switching loss during transitions to a non-conducting state. The device is configured such that the switching loss is different between at least two of the zones. Further, the device is configured such that zones having greater switching losses transition to the non-conducting state before zones having lesser switching losses.

Multiple zone power semiconductor device

A power inverter includes a plurality of power modules stacked in an array. A plurality of coolant chambers are interleaved with the modules. Each of the chambers includes an inlet and an outlet interconnected by a coolant path configured to circulate coolant within the chamber. Fins project into the coolant path and are configured to alter shape based on a temperature of the coolant to alter a turbulence associated with the coolant.

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Ming Su