Chipbond Technology Corporation

Weltrend Semiconductor Inc.

Ming-Sheng Liu

Chin-Tang Hsieh

You-Ming Hsu

Chih-Ping Wang

Meng-Che Tsai

Chien-Tsung Hung

A motor system includes a brushless direct current motor, a back electromotive force (EMF) circuit, and a control unit. The brushless direct current motor includes first to third windings. The back EMF circuit is coupled to the first to the third windings. The control unit is coupled to the back EMF circuit for floating the first winding, energizing the second winding, and energizing the third winding prior to detect a zero-crossing event. The back EMF detects a duration of a freewheeling period of a back EMF signal of the first winding and a zero-crossing event. The control unit updates respective initial angles of respective driving currents of the first to the third windings according to the duration of a freewheeling period, and performs commutation according to respective updated initial angles of the respective driving currents of the first to the third windings upon detecting the zero-crossing event.

Phase compensation method of brushless direct current motor and motor system utilizing the same

A semiconductor structure includes a carrier, a first protective layer, a second protective layer, and a third protective layer. A first surface of the first protective layer comprises a first anti-stress zone. A first extension line from a first bottom edge intersects with a second extension line from a second bottom edge to form a first base point. A first projection line is formed on the first surface, an extension line of the first projection line intersects with the second bottom edge to form a first intersection point, a second projection line is formed on the first surface, and an extension line of the second projection line intersects with the first bottom edge to form a second intersection point. A zone by connecting the first base point, the first intersection point and the second intersection point is the first anti-stress zone.

Semiconductor structure

A semiconductor structure includes a carrier, a first protective layer, a second protective layer, and a third protective layer. A first surface of the first protective layer comprises a first anti-stress zone. The second protective layer reveals the first anti-stress zone and comprises a second surface, a first lateral side, a second lateral side and a first connection side. The second surface comprises a second anti-stress zone. An extension line of the first lateral side intersects with an extension line of the second lateral side to form a first intersection point. A zone formed by connecting the first intersection point and two points of the first connection side is the first anti-stress zone. The third protective layer reveals the second anti-stress zone and comprises a second connection side projected on the first surface to form a projection line parallel to the first connection side.

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Hsinchu, Taiwan

Ming-Sheng Liu