Epileds Technologies, Inc.

Silicon Base Development Inc.

Ming-Sen Hsu

Kung-Hsieh Hsu

Chih-Ming Chen

Chun-Hung Chen

Charng-Shyang Jong

Deng-Huei Hwang

Chun-Yi Lee

Wen-Herng Su

Chin-Fu Ku

Wei-Pu Zheng

Fu-Yi Tsai

Cheng-Yu Chiu

An ultraviolet light-emitting diode is disclosed. The ultraviolet light-emitting diode includes a transparent substrate, an ultraviolet illuminant epitaxial structure, and a transparent structure. The transparent substrate includes a first surface and a second surface which are opposite to each other, and a plurality of side surfaces surrounding and disposed between the first surface and the second surface. The ultraviolet illuminant epitaxial structure is disposed on the first surface of the transparent substrate. The transparent structure has a light-entering surface and a light-exiting surface which are opposite to each other. The light-entering surface of the transparent structure is adjacent to the second surface of the transparent substrate, and a refractive index of the transparent structure is between a refractive index of the transparent substrate and a refractive index of air.

Ultraviolet light-emitting diode

A near-infrared vertical-cavity surface-emitting laser is provided, which utilizes a conventional distributed Bragg reflector and a complex Bragg reflector which consists of a dielectric Bragg reflector and a reflective metal layer to construct a cavity. With the disposition of a confining layer, the light emitted from an active layer is confined in the cavity to resonate so as to emit a laser light. The thickness of the complex Bragg reflector is much thinner than that of the conventional distributed Bragg reflector, thereby lowering the cost of manufacture. In addition, with the transfer method, the laser is transferred to the substrate with high thermal conductivity to increase the heat dissipation efficiency. Therefore, the present invention can maintain operation while emitting a high-power laser.

Near-infrared vertical-cavity surface-emitting laser and transfer method thereof

A growth method of aluminum gallium nitride is disclosed. The method includes the steps of: providing a substrate; forming a first aluminum gallium nitride layer on the substrate at a first temperature; and forming a second aluminum gallium nitride layer, on the first aluminum gallium nitride layer, at a second temperature. The first temperature is higher than the second temperature.

Growth method of aluminum gallium nitride

An UV light-emitting diode includes a patterned substrate, a template layer, a growth layer, a first n-type semiconductor layer, an intrinsic semiconductor layer, a second n-type semiconductor layer, a plurality of layers of multiple quantum wells, a barrier layer, a first electron blocking layer, a second electron blocking layer, a first p-type semiconductor layer and a second p-type semiconductor layer in sequence from a bottom layer to a top layer. Whereas the aforementioned layers all include Group III nitride materials and the number of layers for the plurality of layers of multiple quantum wells is at least five layers. Because the first n-type semiconductor layer, the first p-type semiconductor layer, and the plurality of layers of multiple quantum wells all contain aluminum, short-wavelength UV light is emitted when a current is applied.

UV light-emitting diode

A sapphire substrate with patterned structure includes a sapphire base; a plurality of the cavities formed on a surface of the sapphire base; and a template layer. The plurality of the cavities are periodically arranged at a predetermined distance from each other, and each of the plurality of the cavities has a bottom surface and a top opening. Each of the plurality of the cavities comprises at least a first and a second inclined surfaces, and the first and the second inclined surfaces are inclined by a first and a second angles respectively with respect to the bottom surface of the plurality of the cavities.

Sapphire substrate with patterned structure

A method for growing Group III nitride is provided, which includes the following steps. A plurality of notches separated from each other are formed at the epitaxial substrate surface via the pattering process. The plurality of notches each has at least one stepping structure with a predetermined inclination angle, wherein the stepping structure in each notch gradually descends towards the center of the corresponding notch. The Group III nitride is grown on the epitaxial substrate via epitaxy process. Wherein, the Group III nitride growing at an upper portion of the epitaxial substrate restricts the vertical growth of the Group III nitride growing at the lower portion of the epitaxial substrate, and the Group III nitride growing at the lower portion of the epitaxial substrate promotes the lateral growth of the Group III nitride growing at the upper portion of the epitaxial substrate.

Method for growing group III nitride

This invention discloses a light emitting diode, a wafer level package method, a wafer level bonding method, and a circuit structure for a wafer level package. The light emitting diode includes a package carrier, a conducting material, at least one light emitting diode structure and a package material. The package carrier has at least one package unit and two through holes on the package carrier and corresponding to the package unit. The conducting material is disposed in the through holes and formed at the bottom of the package unit. The light emitting diode structure is formed on a substrate. The substrate having a light emitting diode structure is flipped over in the package unit, and the electrodes of the light emitting diode structure are bonded with the conducting material. After the substrate is removed, a package material is stuffed in the package unit or on the light emitting diode structure.

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Tainan, Taiwan

Ming-Sen Hsu