Western Digital (Fremont), Inc.

Western Digital Technologies, Inc.

Veeco Instruments Inc.

Read Rite Corporation

Other

Sandisk Technologies Inc.

Ming Mao

Daniele Mauri

Chen-jung Chien

Chih-Ching Hu

Yuankai Zheng

Guanxiong Li

Ming Jiang

Shaoping Li

Yung-Hung Wang

Anup Roy

Rongfu Xiao

Qunwen Leng

Gerardo Bertero

Shihai He

Zhihong Zhang

Zhitao Diao

Savas Gider

Wei Gao

Wei Zhang

Christian Kaiser

Yunfei Ding

Steven C Rudy

Guanghong Luo

Ronghui Zhou

Miao Wang

Haiwen Xi

Kuok San Ho

Mahendra Pakala

Zhupei Shi

Ge Yi

Hai Sun

Dujiang Wan

Yukimasa Okada

Goncalo Marcos Baião De Albuquerque

Jacques C S Kools

Miaoyin Wang

Lei Wang

Michael L Mallary

Xiaoyong Liu

Lingyun Miao

Laurence Lujun Chen

Carlos Corona

Ling Wang

Amritpal Singh Rana

Randhir S Bubber

Changhe Shang

Adrian J Devasahayam

Jinsong Wang

Hui Zhao

Yingbo Zhang

Daniel K Lottis

Thomas Andrew Schneider

Chih-Ling Lee

Patricia L Cox

Chen Jung Chien

Hongxue Liu

Abhinandan Chougule

James Mac Freitag

Yi Zheng

Feng Q Liu

Ajit P Paranjpe

Petrus Antonius Van Der Heijden

Tong Zhao

Sining Mao

Kyusik Sin

Ying Hong

Lien-Chang Wang

Hua-Ching Tong

Sanjay Gopinath

Hongquan Jiang

Christopher L Beaudry

Thomas R Omstead

Matthew A Stevenson

Zhipeng Li

Xiaoyu Yang

Haifeng Wang

Goncalo Baiao De Albuquerque

Lily Yao

Chester Xiaowen Chien

Wencheng Su

Xiaohai Xiang

Jianxin Fang

Rong Cao

Guolun Hao

Chen-Jung Chien

Gonçalo Baião De Albuquerque

Jacques Constant Stefan Kools

Michael Gutkin

Ann Lorraine Carvajal

Fang Chen

Goncalo Albuquerque

Srikanth Ganesan

Ruisheng Liu

James Yuan

The present disclosure generally relates to a two-dimensional magnetic recording (TDMR) read head. The TDMR read head comprises a first sensor, a second sensor, and a middle shield (MS) disposed between the first and second sensors. The MS comprises a seed layer, an IrMn layer disposed on the seed layer, an insertion layer comprising Ru or CoFe disposed on the IrMn layer, a first NiFe layer having a pinned magnetization, and a cap layer disposed over the first NiFe layer. In one embodiment, the MS further comprises an Ru layer disposed on the first NiFe layer and a second NiFe layer disposed on the Ru layer, the second NiFe layer having a pinned magnetization in a direction antiparallel to the first NiFe layer. The insertion layer comprising Ru decreases an exchange energy of the MS. The insertion layer comprising CoFe increases an exchange energy of the MS.

Pinned shield with controllable exchange bias field

The present disclosure generally relates to a dual free layer two dimensional magnetic recording read head. The read head comprises a first lower shield, a first sensor disposed over the first lower shield, a first upper shield disposed over the first sensor, a read separation gap (RSG) disposed on the first upper shield, a second lower shield disposed over the RSG, a second sensor disposed over the second lower shield, and a second upper shield disposed over the second sensor. In some embodiments, the second lower shield comprises a CoFeHf layer. In another embodiment, the second lower shield is a synthetic antiferromagnetic multilayer comprising a first shield layer, a second shield layer, and a CoFe/Ru/CoFe anti-ferromagnetic coupling layer or a Ru layer disposed therebetween, the first and second shield layers comprising NiFe and CoFe. In yet another embodiment, the second lower shield comprises layers of Ru, IrMn, and NiFe.

Middle shields two-dimensional magnetic recording read heads

The present disclosure generally relates to a dual free layer two dimensional magnetic recording read head. The read head comprises a first lower shield, a first sensor disposed over the first lower shield, a first upper shield disposed over the first sensor, a read separation gap (RSG) disposed on the first upper shield, a second lower shield disposed on the RSG, a second sensor disposed over the second lower shield, and a second upper shield disposed over the second sensor. In one embodiment, the RSG comprises SiOand has a thickness of about 7 nm to about 14 nm. The SiOisolates the first sensor from the second sensor, and is a chemical mechanical processing (CMP) stop layer. In another embodiment, the RSG comprises a first sublayer comprising AlOx and a second sublayer comprising SiO. The thicknesses of the first and second sublayers are based on an adjustable capacitance.

Produce thinner DTS and adjustable capacitance for TDMR heads

A two-dimensional magnetic recording (TDMR) read head includes a lower reader and an upper reader. Each of the lower reader and the upper reader may have a dual free layer (DFL) magnetic tunnel junction structure having first and second free layers located between lower and upper shields. A synthetic antiferromagnetic (SAF) structure is located on a side of each magnetic tunnel junction. A sidewall insulating layer is located between the lower soft bias layer of the SAF structure and the first free layer. The sidewall insulating layer can have a reduced height such that an upper soft bias layer of the SAF structure is in direct contact with a sidewall of the second free layer, or the upper portion of the sidewall insulating layer located between the upper soft bias layer of the SAF structure and the sidewall of the second free layer has a reduced thickness.

Dual free layer read head having recessed sidewall insulator layer and method of making thereof

The present disclosure generally relates to a dual free layer (DFL) two dimensional magnetic recording (TDMR) read head, and a method of forming thereof. The read head comprises a lower sensor, middle shields disposed on the lower sensor, and an upper sensor disposed on the middle shields. After the lower reader is formed, a dielectric layer is deposited around an outer perimeter of the lower shield. Portions of the dielectric layer are ion milled such that the remaining portions form a substantially flat layer. Another embodiment includes a deposition of a TaOx layer on the dielectric layer, where x is a numeral. Portions of the dielectric layer and the TaOx layer are then ion milled such that the remaining portions of the TaOx layer and the dielectric layer collectively form a substantially planar layer. The middle shields are formed over the lower reader and are substantially planar.

Two-dimensional magnetic recording read head with TaOx layer for flat middle shield topography and method of forming thereof

The present disclosure generally relate to a read head and methods of forming thereof. Upon forming a dual free layer (DFL) sensor and a rear hard bias (RHB) structure on a seed layer, a photoresist is deposited on the DFL read head and the RHB structure. A refill layer is deposited on the photoresist and the seed layer adjacent to the DFL sensor and the RHB structure. Portions of the refill layer disposed on one or more sidewalls of the photoresist are removed, and a SiOx cap layer is deposited on the refill layer and on the one or more sidewalls. The photoresist is removed, and the SiOx cap layer and top surfaces of the DFL sensor and the RHB structure are planarized to form a substantially flat topography. The SiOx cap layer acts as a stop layer for the refill layer, and remains in the finished read head.

DFL read head with SiOx cap layer on AlOx refill layers

The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different resistance area as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge array is non-zero.

Magnetic sensor array with different RA TMR film

The present disclosure generally relates to a read head assembly having a dual free layer (DFL) structure disposed between a first shield and a second shield at a media facing surface. The read head assembly further comprises a rear hard bias (RHB) structure disposed adjacent to the DFL structure recessed from the media facing surface, where an insulation layer separates the RHB structure from the DFL structure. The insulation layer is disposed perpendicularly between the first shield and the second shield. The DFL structure comprises a first free layer and a second free layer having equal stripe heights from the media facing surface to the insulation layer. The RHB structure comprises a seed layer, a bulk layer, and a capping layer. The capping layer and the insulation layer prevent the bulk layer from contacting the second shield.

Vertical junction to provide optimal transverse bias for dual free layer read heads

The present disclosure generally relates to read heads having dual free layer (DFL) sensors. The read head has a sensor disposed between two shields. The sensor is a DFL sensor and has a surface at the media facing surface (MFS). Recessed from the DFL sensor, and from the MFS, is a rear hard bias (RHB) structure. The RHB structure is disposed between the shields as well. In between the DFL sensor and the RHB structure is insulating material. The RHB is disposed on the insulating material. The RHB includes a RHB seed layer as well as a RHB bulk layer. The RHB bulk layer includes a first bulk layer and a second bulk layer, the first bulk layer having a different density relative to the second bulk layer.

Method to enhance magnetic strength and robustness of rear hard bias for dual free layer read

The present disclosure generally relates to a dual free layer (DFL) two dimensional magnetic recording (TDMR) read head. The read head comprises a first sensor, a first rear hard bias (RHB) structure disposed adjacent to the first sensor, an upper shield disposed over the first sensor and first RHB structure, a lower shield disposed over the upper shield, a second sensor disposed over the lower shield, and a second RHB structure disposed adjacent to the second sensor. A first surface of the first sensor is substantially flush or aligned with a first surface of the first RHB structure. A first surface of the second sensor is substantially flush or aligned with a first surface of the second RHB structure. The upper shield extends linearly from a media facing surface into the read head. The first lower shield is over-milled a greater amount of time than the second lower shield.

Planar design for sensors in a dual free layer read head

The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR films. Each resistor has identical TMR films. The TMR films of two resistors have reference layers that have an antiparallel magnetic orientation relative to the TMR films of the other two resistors. To ensure the antiparallel magnetic orientation, the TMR films are all formed simultaneously and annealed in a magnetic field simultaneously. Thereafter, the TMR films of two resistors are annealed a second time in a magnetic field while the TMR films of the other two resistors are not annealed a second time.

Magnetic sensor array with single TMR film plus laser annealing and characterization

A tunneling magnetoresistance (TMR) sensor device is disclosed that includes four or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first, second, third, and fourth TMR resistors are disposed in the same plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to the magnetization of a free layer, but opposite to the magnetization direction of the reference layer of the first TMR film.

Magnetic sensor with dual TMR films and the method of making the same

A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first and fourth TMR resistors are disposed in a first plane while the second and third TMR resistors are disposed in a second plane different than the first plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction of a free layer.

High sensitivity TMR magnetic sensor

The present disclosure generally relates to a Wheatstone bridge array comprising TMR sensors and a method of fabrication thereof. In the Wheatstone bridge array, there are four distinct TMR sensors. The TMR sensors are all fabricated simultaneously to create four identical TMR sensors that have synthetic antiferromagnetic free layers as the top layer. The synthetic antiferromagnetic free layers comprise a first magnetic layer, a spacer layer, and a second magnetic layer. After forming the four identical TMR sensors, the spacer layer and the second magnetic layer are removed from two TMR sensors. Following the removal of the spacer layer and the second magnetic layer, a new magnetic layer is formed on the now exposed first magnetic layer such that the new magnetic layer has substantially the same thickness as the spacer layer and second magnetic layer combined.

Magnetic sensor array with one TMR stack having two free layers

The present disclosure generally related to a two dimensional magnetic recording (TDMR) read head having a magnetic tunnel junction (MTJ). Both the upper reader and the lower reader have a dual free layer (DFL) MTJ structure between two shields. A synthetic antiferromagnetic (SAF) soft bias structure bounds the MTJ, and a rear hard bias (RHB) structure is disposed behind the MTJ. The DFL MTJ decreases the distance between the upper and lower reader and hence, improves the area density capacity (ADC). Additionally, the SAF soft bias structures and the rear head bias structure cause the dual free layer MTJ to have a scissor state magnetic moment at the media facing surface (MFS).

Two-dimensional magnetic recording reader with dual free layer magnetic tunnel junction

Growing community of inventors

Dublin, CA, United States of America

Ming Mao