Southern Taiwan University of Science and Technology

Everlight Electronics Co., Ltd.

Ming-Lun Lee

A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface. An area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the micro-structures is A2, such that A1 and A2 satisfy the relation of 0.1&#x2264;A2/(A1+A2)&#x2264;0.5. The light emitting diode element layer is disposed on the growth surface of the substrate.

Light emitting diode chip

A light emitting diode, including a semiconductor epitaxial structure, a first electrode and a second electrode is provided. The semiconductor epitaxial structure includes a plurality stacked light-emitting layers, and each of the light-emitting layers respectively emits different range of wavelength of light. The first electrode is electrically connected to the semiconductor epitaxial structure. The second electrode is electrically connected to the semiconductor epitaxial structure. Furthermore, a data transmission and reception apparatus is provided.

Light emitting diode and data transmission and reception apparatus

A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface. An area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the microstructures is A2, such that A1 and A2 satisfy the relation of 0.1&#x2266;A2/(A1+A2)&#x2266;0.5. The light emitting diode element layer is disposed on the growth surface of the substrate.

A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface, wherein an area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the micro-structures is A2, wherein A1 and A2 satisfies the relation of 0.1&#x2266;A2/(A1+A2)&#x2266;0.5. The light emitting diode element layer is disposed on the growth surface of the substrate.

Growing community of inventors

Tainan, Taiwan

Ming-Lun Lee