Chinese Academy of Sciences

Boe Technology Group Co., Ltd.

Beijing Xiaomi Mobile Software Co., Ltd.

Army Academy of Armored Forces

Other

Airbus (beijing) Engineering Centre Company Limited

Xiaomi Inc.

Vmware, Inc.

Lenovo (beijing) Limited

Beijing Boe Technology Development Co., Ltd.

Baidu Online Network Technology (beijing) Co., Ltd.

China Petroleum Chemical Corporation

Beijing Roborock Technology Co., Ltd.

Beijing Sankuai Online Technology Co., Ltd

Sinopec Petroleum Engineering Technology Research Institute Co., Ltd.

Ming Liu

Hangbing Lv

Qi Liu

Shibing Long

Hongwei Tian

Ling Li

Zongliang Huo

Zheng Liu

Jing Wang

Chunyang Wang

Dong Li

Di Wang

Yanan Niu

Hao Zhang

Yueping Zuo

Wei Wang

Hao Liu

Yan Wang

Jia Zhao

Dongmei Zhang

Yu Liu

Xiaolong Li

Shuai Zhang

Xin Chen

Lintao Zhang

Yanhua Wang

Yang Liu

Chenxi Zhu

Feng Zhang

Jing Liu

Ying Li

Yang Yu

Dawei Wang

Pinfan Wang

Nan Li

Chunyan Xie

Lei Ma

Chao Xi Chen

Jizhou Huang

Yanliu Sun

Jianfeng Chen

Xueyan Tian

Mei Li

Tuo Shi

Huijuan Zhang

Lei Zhou

Sen Ma

Wei Han

Qing Luo

Changqing Xie

Qiuhua Meng

Guozhong Xing

Xiaoxin Xu

Dongmei Li

Huai Lin

Haidou Wang

Guozheng Ma

Cheng Lu

Jiebin Niu

Nianduan Lu

Yijing Liao

Shengfa Liang

Jiayi Li

Xiaojing Li

Long Liu

Jianjiang Qu

Pengfei He

Haijun Wang

Zhiguo Xing

Ziang Han

Haitao Sun

Xi Luo

Bing Chen

Bowen Li

Zunqing Song

Zhaoqin Lin

Shantao Chen

Kaipeng Fu

Le Wang

Fei Fang

Lei Jin

Lin Fan

Caiyu Qu

Qin Hua Wang

Feng Yan

Yufei Wang

Fan Jin

Minghao Li

Chao Chen

Liangxiong Wu

Di Geng

Sen Liu

Jiuzhen Wang

Kun Zhang

Pan Cheng

Zhanwei Luo

Jianguo Yang

Xinyue Wang

Keke Zhang

Jinbin Lin

Storage box

A method of preparing a programmable diode, including: forming a tungsten plug by a standard CMOS process; taking the tungsten plug as a lower electrode and depositing a functional layer material such as a ferroelectric film on the tungsten plug; depositing an upper electrode on the functional layer material; and patterning the upper electrode and a functional layer to complete a preparation of the programmable diode. The present disclosure further discloses a ferroelectric memory of a programmable diode prepared by the method of preparing a programmable diode. The method of preparing a programmable diode does not require growing a lower electrode and reduces a complexity of the process. The ferroelectric memory includes a transistor and a programmable diode. This design stores information according to different polarities of the diode, thus a device area may be further reduced and a storage density may be improved.

Method of preparing programmable diode, programmable diode and ferroelectric memory

The present disclosure provides a memristor, including a transistor and a resistive random access memory, where a drain electrode of the transistor is connected to a bottom electrode of the resistive random access memory; and the resistive random access memory includes: the bottom electrode, a resistive random access material layer, a current compliance layer and a top electrode from bottom to top, where the current compliance layer is configured to stabilize a fluctuation of a low resistance by reducing a surge current and optimizing a heat distribution, so as to improve a calculation accuracy of a Hamming distance.

Memristor, method of calculating hamming distance, and in-memory computing integration application

A pressure sensor based on zinc oxide nanowires and a method of manufacturing a pressure sensor based on zinc oxide nanowires are provided. The manufacturing method includes: manufacturing a bottom electrode on a substrate; manufacturing a seed layer on the bottom electrode; manufacturing a zinc oxide nanowire layer on the seed layer; manufacturing a support layer on the zinc oxide nanowire layer; and manufacturing a top electrode on the support layer.

Pressure sensor based on zinc oxide nanowires and method of manufacturing pressure sensor

Provided is an all-electrically-controlled spintronic neuron device, a neuron circuit and a neural network. The neuron device includes: a bottom antiferromagnetic pinning layer; a synthetic antiferromagnetic layer formed on the bottom antiferromagnetic pinning layer; a potential barrier layer formed on the ferromagnetic free layer, wherein a region of the ferromagnetic free layer directly opposite to the potential barrier layer forms a threshold region; a ferromagnetic reference layer formed on the potential barrier layer; wherein the potential barrier layer, the ferromagnetic reference layer and the ferromagnetic free layer form a magnetic tunnel junction; a first antiferromagnetic pinning layer and a second antiferromagnetic pinning layer formed on an exposed region of the ferromagnetic free layer except the region directly opposite the potential barrier layer, and located on two sides of the potential barrier layer; and a first electrode formed on the ferromagnetic reference layer.

All-electrically-controlled spintronic neuron device, neuron circuit and neural network

A display panel includes a substrate, a light-emitting structure layer, a specular reflection layer and an interference adjustment layer. The light-emitting structure layer is located on a side of the substrate. The light-emitting structure layer has a plurality of light-emitting regions and a non-light-emitting region for spacing the plurality of light-emitting regions apart from each other. The specular reflection layer is located on a side of the light-emitting structure layer away from the substrate. The specular reflection layer covers at least the non-light-emitting region. The interference adjustment layer is located on a side of the specular reflection layer away from the light-emitting structure layer. The interference adjustment layer is configured such that lights of some colors interfere destructively to form a mirror display of a set color.

Display panel and method for manufacturing the same, and display device

Provided are a memory cell structure, a memory array structure, and a voltage biasing method. The memory cell structure includes: a substrate layer, a well layer and a transistor. The substrate layer is configured to support the memory cell structure; the well layer is embedded in the substrate layer, an upper surface of the well layer is flush with an upper surface of the substrate layer, and a transistor is arranged on the well layer.

Memory cell structure, memory array structure, and voltage biasing method

A small-size axial powder feeding inner hole plasma spraying gun comprises a nozzle with one end fixed on one side of a front gun body through a nozzle gland and the other end extending to the other side of the front gun body; an insulator arranged between the front gun body and a rear gun body; a powder feeding frame fixedly connected to the rear gun body internally provided with a powder inlet channel, a cathode seat of a cathode being connected to the powder feeding joint, a cathode head extending into a spray hole channel of the nozzle, and an annular cavity being formed between the cathode head and an inner wall of the spray hole channel; an air inlet channel arranged on the front gun body and communicated with the annular cavity; and a cooling channel with an interior introduced with cooling water.

Small-size axial powder feeding inner hole plasma spraying gun

A self-reference storage structure includes: three transistors, including a first transistor T, a second transistor T, and a third transistor T; and two magnetic tunnel junctions, including a first magnetic tunnel junction MTJand a second magnetic tunnel junction MTJ. The first magnetic tunnel junction MTJis connected in series between the first transistor Tand the second transistor T, and the second magnetic tunnel junction MTJis connected in series between the second transistor Tand the third transistor T. When the first transistor T, the second transistor Tand the third transistor Tare turned on, one-bit binary information is written; and when data is stored, one-bit binary write can be implemented only by applying an unidirectional current pulse.

Self-reference storage structure and in-memory computing circuit

A neuron circuit (), including a memristive element (M) used to receive an excitation signal; a trigger element (D) connected to the memristive element (M) and used to receive a clock control signal for the neuron circuit and an output signal of the memristive element (M); a feedback element (T) connected to an output end of the trigger element (D) and an input end of the memristive element (M), and used to control a voltage at the input end of the memristive element (M); and an AND circuit (A) used to perform an AND operation on an output signal of the trigger element (D) and the clock control signal. An output signal of the AND circuit (A) acts as an output signal of the neuron circuit ().

Neuron circuit and neural network circuit

Disclosed is an afferent neuron circuit, which includes: a resistance Rc and a volatile threshold switching device TS, wherein the volatile threshold switching device TS is provided with a parasitic capacitor Cparasitic; a first end of the resistance Rc serves as a signal input terminal, and a second end of the resistance Rc serves as a signal output terminal; and a first end of the volatile threshold switching device TS is connected to the signal output terminal, and a second end of the volatile threshold switching device TS is grounded. The afferent neuron circuit provided in the content of the present disclosure has a simple structure and good scalability and is suitable for large-scale integration.

Afferent neuron circuit and mechanoreceptive system

Disclosed are an artificial sensory nervous circuit and a manufacturing method thereof. The artificial sensory nervous circuit includes a sensor (S), a first memristor (RS), and a neuron circuit, where the first memristor (RS) has a unidirectional resistance characteristic. The sensor (S) is configured to sensing an external signal and generating an excitation signal according to the external signal. The first memristor (RS) is configured to generating a response signal according to the excitation signal. The neuron circuit is configured to perform charging and discharging according to the response signal so as to output a pulse signal. With the artificial sensory nervous circuit and the manufacturing method thereof, sensitivity and habituation characteristics of biological perception are realized by using a simple circuit.

Artificial sensory nervous circuit and manufacturing method thereof

Provided is a spintronic device, a memory cell, a memory array, and a read and write circuit applied in a field of integration technology. The spintronic device includes: a bottom electrode; a spin orbit coupling layer, arranged on the bottom electrode; at least one pair of magnetic tunnel junctions, arranged on the spin orbit coupling layer, wherein each of the magnetic tunnel junctions includes a free layer, a tunneling layer, and a reference layer arranged sequentially from bottom to top, and wherein magnetization directions of reference layers of two magnetic tunnel junctions of each pair of the magnetic tunnel junctions are opposite; and a top electrode, arranged on a reference layer of each of the magnetic tunnel junctions.

Spintronic device, memory cell, memory array and read and write circuit

An organic light emitting display panel includes a substrate having one or more organic light emitting diodes thereon; a pixel definition layer, wherein the pixel definition layer defines one or more sub-pixel regions on the substrate; a metal layer, wherein the metal layer is located on one side of the pixel definition layer away from the substrate; an anti-reflection layer, wherein the anti-reflection layer is located on one side of the metal layer away from the pixel definition layer, and the orthographic projection of the metal layer on the substrate is located within the range where the orthographic projection of the anti-reflection layer on the substrate is located; a light emitting layer, wherein the light emitting layer is located on one side of the anti-reflection layer away from the metal layer; and a cathode, wherein the cathode is located on one side of the light emitting layer away from the anti-reflection layer, and the cathode is connected to the metal layer in a roundabout manner.

Organic light emitting display panel, method for manufacturing the same, and display device

Growing community of inventors

Beijing, China

Ming Liu