Taiwan Semiconductor Manufacturing Comp. Ltd.

Ming Ling Yeh

Tien-I Bao

Keng-Chu Lin

Shwang-Ming Cheng

Chen-Hua Douglas Yu

Shwang-Ming Jeng

A semiconductor structure having an opening formed in a porous dielectric layer is provided. The exposed pores of the dielectric layer along the sidewalls of the opening are sealed. The sealing may comprise a selective or a non-selective deposition method. The sealing layer has a substantially uniform thickness in one portion of the opening and a non-uniform thickness in another portion of the opening. A damascene interconnect structure having a pore sealing layer is provided as is its method of manufacture.

Integration scheme for Cu/low-k interconnects

A semiconductor method of manufacturing involving low-k dielectrics is provided. The method includes depositing a hydrocarbon of the general composition CHon the surface of a low-k dielectric. The hydrocarbon layer is deposited by reacting a precursor material, preferably CHor (CH)CHCHCH, using a PECVD process. In accordance with embodiments of this invention, carbon diffuses into the low-k dielectric, thereby reducing low-k dielectric damage caused by plasma processing or etching. Other embodiments comprise a semiconductor device having a low-k dielectric, wherein the low-k dielectric has carbon-adjusted dielectric region adjacent a trench sidewall and a bulk dielectric region. In preferred embodiments, the carbon-adjusted dielectric region has a carbon concentration not more than about 5% less than in the bulk dielectric region.

[object Object]

A semiconductor method of manufacturing involving porous and/or carbon containing, low-k dielectrics is provided. The method includes forming a hydrocarbon of the general composition CHon the surface of the low-k dielectric. The hydrocarbon layer includes depositing a precursor material, preferably CHor (CH)CHCHCH. In accordance with embodiments of this invention, carbon diffuses into the low-k dielectric, thereby reducing carbon depletion damage caused by plasma processing or etching. Surface dielectric pores damaged by plasma processing are also repaired by sealing them with the CHlayer. Embodiments include semiconductor devices, such as devices having damascene interconnect structures, manufacturing using methods provided.

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Tainan, Taiwan

Ming Ling Yeh