National Science Council

Winbond Electronics Corporation

National Sun Yat-Sen University of Kaohsiung

National Science Counsel

Windbond Electronics Corp.

Ming-Kwei Lee

Hsin-Chih Liao

Jung-Jie Huang

Wen-Han Hung

Ray-Hwa Horng

Bo-Hsiung Lei

Yu-Hsiang Hung

Tsung-Hsiang Shih

Lin-Hung Haung

Chih-Feng Yen

Min-Yen Yeh

Chung-Hsing Lin

Tsung-Shiun Wu

Yu-Hsiung Wang

A method for preparing titanium dioxide particles co-doped with nitrogen and fluorine includes the steps of: mixing boric acid with ammonium fluorotitanate in an aqueous medium to form ammonium oxotrifluorotitanate; liquid-phase depositing the ammonium oxotrifluorotitanate on a silicon-containing substrate; and thermo-treating the ammonium oxotrifluorotitanate on the silicon-containing substrate at a temperature ranging from 300 to 1000&#xb0; C.

Method for preparing titanium dioxide particles co-doped with nitrogen and fluorine

A method for making a MOS device includes: forming an insulator layer on a semiconductor substrate, the insulator layer including a titanium dioxide film that has a surface with hydroxyl groups formed thereon; and forming an aluminum cap film on the surface of the titanium dioxide film, and conducting annealing operation of the aluminum cap film at an annealing temperature sufficient to permit formation of active hydrogen atoms through reaction of the aluminum cap film and the hydroxyl groups, thereby enabling hydrogen passivation of oxide traps in the titanium dioxide film through diffusion of the active hydrogen atoms into the titanium dioxide film.

Method for making a metal oxide semiconductor device

A method for making a MOS device includes: forming a titanium dioxide film on a semiconductor substrate; and subjecting the titanium dioxide film to a fluorine-containing ambient, and conducting passivation of grain boundary defects of the titanium dioxide film through reaction of fluorine and titanium dangling bonds in the titanium dioxide film.

A method and an apparatus for growing a layer on one surface of a wafer by liquid phase deposition are provided. At first, a first wafer is putted on a first wafer-holder by its first surface. Then, a growth-liquid vessel having a first opening at the bottom is mounted on the first wafer-holder. Thereafter, a growth liquid is poured into the growth-liquid vessel to expose a second surface of the first wafer to the growth liquid for growing the layer on the second surface of the first wafer. Then, the, first wafer is taken out from the first wafer-holder to obtain a wafer with a layer grown only on one surface.

Method and apparatus for growing layer on one surface of wafer

This invention disclose a method for growing a barium titanate layer by means of liquid phase deposition (LPD), which characterizes by low cost, low-temperature growth, and easily practice. This novel method for growing a barium titanate characterizes by mixing a barium nitrate solution and hexafluorotitanic acid solution to produce a barium titanate solution. Next, a boric acid solution is added to the barium titanate solution to prepare a barium titanate growth solution. Then a substrate, such as a wafer, ready to grow a barium titanate layer thereon is dipped in this growth solution for a period of time at a suitable temperature. Thereafter, a barium titanate dielectric layer with the properties of high dielectric constant, low leakage current and breakdown resistant can be formed on the substrate.

Method for growing a barium titanate layer

A titanium dioxide layer serving as a mask used in a manufacturing process of integrated circuit and its removed method are disclosed. The method includes the steps of forming a titanium dioxide layer on the integrated circuit device to serve as a mask, and using an etchant to selectively remove the titanium dioxide layer. The titanium dioxide layer is formed by the steps of providing a titanium-containing material, adding an acid substance to the titanium-containing material to form a mixture, and exposing the integrated circuit device to the mixture to form the titanium dioxide layer thereon.

Titanium dioxide layer serving as a mask and its removed method

A method for preparing a barium fluorotitanate (BaTiF ) powder and depositing a barium titanate (BaTiO ) thin film on a silicon wafer is disclosed. The method includes steps of a) producing a barium fluorotitanate powder by mixing a hexafluorotitanic acid solution and a barium nitrate solution at a low temperature, b) dissolving the barium fluorotitanate powder into water and mixing with a boric acid solution, and c) immersing a silicon wafer into the mixture at a low temperature to grow a barium titanate thin film on the silicon wafer.

Method for growing barium titanate thin film

A high gain and low leakage current porous silicon metal-semiconductor-metal planar photodetector was fabricated through rapid thermal oxidation (RTO) and rapid thermal annealing (RTA). A high responsivity of 2.15 A/W can be obtained under a 0.85 mW 675 nm laser diode illumination. The gain is 400%. It shows high potential as a device applied in optoelectronics and optoelectronic integrated circuits.

Method of fabricating a planar porous silicon metal-semicoductor-metal photodetector

A method for forming a titanium dioxide layer is disclosed. The method includes the steps of providing a titanium-containing material, adding hydrogen chloride and nitric acid to the titanium-containing material to form a mixture, and exposing the device to the mixture to form the titanium dioxide layer thereon. Not only can the refractive index of the titanium dioxide layer formed by this method be increased, but also its growth rate and stability will be enhanced to be applied in the production line. Such a method can be applied for forming a titanium dioxide layer on a semiconductor device, a silicon substrate, an integrated circuit, a photoelectric device, etc.

Method for forming a titanium dioxide layer

A method for forming a titanium dioxide layer is disclosed. The method includes the steps of providing a titanium-containing material, adding an acid substance to the titanium-containing material to form a mixture, and exposing the device to the mixture to form the titanium dioxide layer thereon. Such a method can be applied for forming a titanium dioxide layer on a semiconductor device, a silicon substrate, an integrated circuit, a photoelectric device, etc.

A method and an apparatus for growing a layer on one surface of a wafer by liquid phase deposition are provided. At first, a first wafer is putted on a first wafer-holder by its first surface. Then, a growth-liquid vessel having a first opening at the bottom is mounted on the first wafer-holder. Thereafter, a growth liquid is poured into the growth-liquid vessel to expose a second surface of the first wafer to the growth liquid for growing the layer on the second surface of the first wafer. Then, the first wafer is taken out from the first wafer-holder to obtain a wafer with a layer grown only on one surface.

A liquid phase deposition method of mass producing substantially uniform silicon dioxide films on wafers by forming wafer sets from at least four wafers. The wafer sets are placed in a slotted polytetrafluroethylene polymer boat wherein a proper and short distance between the front surface of a wafer and another surface is created. Finally, a substantially uniform silicon dioxide film is deposited on the wafer surfaces by contacting the wafer sets with an aqueous supersaturated silicon dioxide solution comprising a mixture of hydrofluosilicic acid and boric acid.

Mass production of silicon dioxide film by liquid phase deposition method

The rapid thermal oxidation (RTO) and rapid thermal annealing(RTA) were used to improve the photo-current and photoresponsivity of porous silicon photodetector. In addition, we remove the surface oxide of the porous silicon under the metal grid using the same mask, and enhance the photo-current of porous silicon photodetector at zero bias voltage. This invention removes the limitation of application of the porous silicon photodetector.

Method to improve the short circuit current of the porous silicon

LPD (Liquid Phase Oxide Deposition) technology is a newly developed approach to deposit SiO.sub.2 on silicon wafers. LPD-SO.sub.2 film was deposited by immersing the wafer in hydrofluosilicic acid (H.sub.2 SiF.sub.6) solution supersaturated with silica gel at low temperature (about 40.degree. C.). LPD-SiO.sub.2, also the deformation of wafers is avoided so the method can be applied to the fabrication of integrated circuits. Moreover, this method has high potential to replace the CVD-SiO.sub.2. However, it is very hard to deposit LPD-SiO.sub.2 on very clean silicon wafer (e.g., without any oxide) because of no nucleation seed. In this study, the LPD-SiO.sub.2 was deposited on silicon wafer with a plasma-enhanced chemical vapor deposition oxide, a thermal oxide, an atmospheric pressure chemical vapor deposition oxide, and a nitric acid pretreatment oxide. The nitric acid pretreatment enhances the LPD-SiO.sub.2 growth rate and reduce the stress in the LPD-SiO.sub.2 film. In addition, it has a smaller dielectric constant and it can reduce the parasitic capacitance in integrated circuits.

Pretreatment method of a silicon wafer using nitric acid

The present invention provides a method for forming porous silicon, which includes the steps of: a) providing a silicon substrate; b) growing a GaAs layer on the silicon substrate; c) defining a pattern for the GaAs layer by a photolithography process and etching the patterned GaAs layer to obtain a GaAs mask; and d) forming a porous silicon layer by anodic-oxidation-etching the silicon substrate uncovered by the GaAs mask. By this method, etching under the GaAs layer on the silicon substrate can be executed very well to form the porous silicon. And the patterned GaAs layer is etched by a process in step c), which is selected from a wet etching and a dry etching process with a photoresist as a mask. In addition, the anodic-oxidation-etching process in step d) is an electrolytic process executed in HF acidic solution which is a mixture of 30 vol. % HF and 70 vol. % H.sub.2 O, in which the HF concentration is 49 wt. %.

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Kaohsiung, Taiwan

Ming-Kwei Lee