Battelle Memorial Institute

Ming Kun Shi

Gordon Lee Graff

Peter Maclyn Martin

Mark Edward Gross

Eric Sidney Mast

Michael G Hall

A barrier assembly. The barrier assembly includes at least one barrier stack having at least one barrier layer and at least one polymer layer. The barrier stack has an oxygen transmission rate of less than 0.005 cc/m/day at 23&#xb0; C. and 0% relative humidity, and an oxygen transmission rate of less than 0.005 cc/m/day at 38&#xb0; C. and 90% relative humidity. The barrier stack also has a water vapor transmission rate of less than 0.005 g/m/day at 38&#xb0; C. and 100% relative humidity. A method for making a barrier assembly is also disclosed.

Ultrabarrier substrates

An encapsulated display device. The device includes a substrate, an environmentally sensitive display device adjacent to the substrate, and at least one first barrier stack adjacent to the environmentally sensitive display device. The barrier stack encapsulates the environmentally sensitive display device. It includes at least one first barrier layer and at least one first polymer layer. The encapsulated display device optionally includes at least one second barrier stack located between the substrate and the environmentally sensitive display device. The second barrier stack includes at least one second barrier layer and at least one second polymer layer. A method for making an encapsulated display device is also disclosed.

Method of making encapsulated display devices

Encapsulated display devices

An encapsulated microelectronic device. The device includes a semiconductor substrate, microelectronic device adjacent to the semiconductor substrate, and at least one first barrier stack adjacent to the microelectronic device. The barrier stack encapsulates the microelectronic device. It includes at least one first barrier layer and at least one first polymer layer. The encapsulated microelectronic device optionally includes at least one second barrier stack located between the semiconductor substrate and the microelectronic device. The second barrier stack includes at least one second barrier layer and at least one second polymer layer. A method for making an encapsulated microelectronic device is also disclosed.

Semicoductor passivation using barrier coatings

A high temperature substrate having improved properties. The substrate is a polymer substrate having a glass transition temperature greater than about 120&deg; C., and at least one first barrier stack adjacent to the polymer substrate. The barrier stack includes at least one first barrier layer and at least one first polymer layer. A method for making the high temperature substrate with improved properties is also disclosed.

Smoothing and barrier layers on high Tg substrates

A barrier assembly. The barrier assembly includes at least one barrier stack having at least one barrier layer and at least one polymer layer. The barrier stack has an oxygen transmission rate of less than 0.005 cc/m /day at 23&deg; C. and 0% relative humidity, and an oxygen transmission rate of less than 0.005 cc/m /day at 38&deg; C. and 90% relative humidity. The barrier stack also has a water vapor transmission rate of less than 0.005 g/m /day at 38&deg; C. and 100% relative humidity. A method for making a barrier assembly is also disclosed.

Growing community of inventors

Richland, WA, United States of America

Ming Kun Shi