Advanced Semiconductor Engineering, Inc.

I-shou University

Ming-Kun Chen

Tsung-Yueh Tsai

Yi-Shao Lai

Ming-Hsiang Cheng

Hsiao-Chuan Chang

Yu-Jung Huang

Tai-Ping Wang

Chun-Wei Huang

Yi-Lung Lin

I L Lin

Ken Juang

Kai-Jen Liu

A chip-to-chip signal transmission system is provided, which includes a first chip, a second chip, and a dielectric layer. A signal transmission is performed between a transmitter of the first chip and a receiver of the second chip through a transmission-metal-pad unit and a receiving-metal-pad unit. The transmitter transmits a transmission-testing-coupling signal through the transmission-metal-pad unit according to a driving-testing signal when the transmitter receives the driving-testing signal. A first testing unit receives the transmission-testing-coupling signal and outputs a transmission-testing signal according to the transmission-testing-coupling signal. A second testing unit transmits a receiving-testing-coupling signal through the receiving-metal-pad unit according to the driving-testing signal when the second testing unit receives the driving-testing signal. The receiver receives the receiving-testing-coupling signal and outputs a receiving-testing signal according to the receiving-testing-coupling signal.

Chip-to-chip signal transmission system and chip-to-chip capacitive coupling transmission circuit

A signal transmission system and a signal transmission circuit are provided. The system includes a first chip and a second chip. A rising pulse signal (RPS) and a falling pulse signal (FPS) are generated by a transmission module on the first chip in response to a waveform of an input signal. The RPS corresponds to rising edges of the input signal, the FPS corresponds to falling edges of the input signal, and the RPS and the FPS are transmitted by a first transmission unit and a second transmission unit both located on a surface of the first chip.

Signal transmission system and signal transmission circuit

A semiconductor package includes a semiconductor structure. The semiconductor structure includes a plurality of dielectric layers and a plurality of conductive interconnects embedded in the semiconductor structure. The semiconductor structure also includes a plurality of proximity communication signal input terminals. At least one of the plurality of proximity communication signal input terminals includes a first electrode and a second electrode. The first electrode and the second electrode are spaced apart so as to be configured to provide proximity communication through capacitive coupling. The first electrode is exposed proximate to a surface of the semiconductor structure.

Semiconductor package having proximity communication signal input terminals and manufacturing methods thereof

Provided is an active non-contact probe card including a carrier, a support base, a piezoelectric material layer, an active sensor array chip and a control circuit. The support base is disposed on the carrier. The piezoelectric material layer is connected with the support base. The position of the active sensor array chip with respect to the carrier is determined according to the thicknesses of the support base and the thicknesses of the piezoelectric material layer. A control circuit provides a control voltage to the piezoelectric material layer to control the thickness of the piezoelectric material layer, so as to adjust the position of the active sensor array chip with respect to the carrier.

Active non-contact probe card

The present invention relates to a semiconductor package having at least one first layer chip, a plurality of first metal bumps, at least one second layer chip and a package body. The first layer chip includes a first active surface upon which the first metal bumps are disposed and a plurality of first signal coupling pads disposed adjacent to the first active surface. The second layer chip is electrically connected to the first layer chip, and includes a second active surface that faces the first active surface and a plurality of second signal coupling pads. The second signal coupling pads are capacitively coupled to the first signal coupling pads so as to provide proximity communication between the first layer chip and the second layer chip. The package body encapsulates the first layer chip, the first metal bumps, and the second layer chip, and the first metal bumps are partially exposed.

Semiconductor package

The present invention relates to an apparatus and a method for testing non-contact pads of a semiconductor device to be tested. The apparatus includes an insulating body, at least one testing module and a plurality of probes. The insulating body includes an accommodating cavity, a lower opening and at least one side opening. The side opening communicates with the accommodating cavity and the lower opening. The testing module is disposed in the side opening, and each testing module includes a circuit board and an active chip. The active chip is disposed on and electrically connected to the circuit board. The active chip has a plurality of testing pads exposed to the accommodating cavity. The probes are disposed in the lower opening. Whereby, the non-contact pads of the semiconductor device to be tested face but not in physically contact with the testing pads of the active chip, so as to test the proximity communication between the non-contact pads of the semiconductor device and the testing pads of the active chip.

Apparatus and method for testing non-contact pads of a semiconductor device to be tested

The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes a first chip and a second chip. The first chip comprises a first active surface, at least one first non-top metal layer and a plurality of first signal coupling pads. The first non-top metal layer is disposed adjacent to and spaced apart from the first active surface by a second distance. The first signal coupling pads are disposed on the first non-top metal layer. The second chip is electrically connected to the first chip. The second chip comprises a second active surface, at least one second non-top metal layer and a plurality of third signal coupling pads. The second active surface faces the first active surface of the first chip. The second non-top metal layer is disposed adjacent to and spaced apart from the second active surface by a fourth distance. The third signal coupling pads are disposed on the second non-top metal layer and capacitively coupled to the first signal coupling pads of the first chip, so as to provide proximity communication between the first chip and the second chip. Whereby, the gap variation between the first signal coupling pads of the first chip and the third signal coupling pads of the second chip is under stringent control of the second distance and the fourth distance. Therefore, the mass-production yield of the semiconductor package is increased.

Semiconductor package and method for making the same

A detection device for detecting an oscillator is provided. The detection device includes an oscillator control circuit, a frequency-decreasing circuit and a display circuit. The oscillator control circuit is used for outputting the oscillator signal of the oscillator. The frequency-decreasing circuit is connected to the output of the oscillator control circuit and has a capacitor suitable for charging and discharging and a resistor, which can adjust the time constant of the oscillator signal. The display circuit is connected to the frequency-decreasing circuit for showing the output signal of the frequency-decreasing circuit. The detection device can decide whether the oscillator is normal or broken by observing a component of the display circuit, for example, the twinkling of a light emitting diode of the display circuit.

Growing community of inventors

Kaohsiung, Taiwan

Ming-Kun Chen