Advanced Micro Devices Corporation

Ati Technologies Ulc

Ati Technologies Inc.

Ming-Ju Edward Lee

Lin Chen

Joseph D Macri

Stephen L Morein

Aaron John Nygren

Xiaoling Xu

Arvind Bomdica

Shadi M Barakat

Toan Duc Pham

Claude R Gauthier

Warren Fritz Kruger

Xin Liu

Min Xu

Yikai Liang

Steven Morein

Michael John Litt

Jinyung Namkoong

Samudyatha Suryanarayana

Gayatri Gopalan

Gin S Yee

Kevin Yikai Liang

Jaeseo Lee

W Fritz Kruger

Rohit Rathi

Michael Litt

Apparatuses are provided for adjusting the write timing. For instance, the apparatus can include an address/control bus, a write clock data recovery (WCDR) signal bus, and a timing adjustment module. The address/control bus can be configured to concurrently enable a WCDR mode of operation and an active mode of operation. The WCDR signal bus can be configured to transmit WCDR data to a memory device during the WCDR mode of operation. And the timing adjustment module can be configured to adjust a timing based on a phase shift in the WCDR data.

Command protocol for adjustment of write timing delay

A method and system are provided for adjusting a write timing in a memory device. For instance, the method can include receiving a data signal, a write clock signal, and a reference signal. The method can also include detecting a phase shift in the reference signal over time. The phase shift of the reference signal can be used to adjust a phase difference between the data signal and the write clock signal, where the memory device recovers data from the data signal based on an adjusted write timing of the data signal and the write clock signal.

Adjustment of write timing in a memory device

A method is provided for selecting at least one of a plurality of slew rate control settings based at least upon a speed of data transmission and receiving input data where the input data is received at the data transmission speed. The method also includes switching the received input data in accordance with the selected at least one of a plurality of slew rate control settings and sending output data at the data transmission speed. Also provided is data driver device that includes at least one activation portion comprising one or more slew rate controls, a voltage-mode driver portion and at least a first current-mode driver portion. Also provided is a computer readable storage device encoded with data for adapting a manufacturing facility to create the data driver device. Also provided is a system including the data driver device, a data storage device and a processor device.

Method to control slew rate of a current-mode logic output driver

A system and method for detecting errors in high-speed asymmetric interfaces are described. Embodiments include transmitting digital data between a first system component and a second system component over a bidirectional interface, wherein the first component is significantly more intelligent than the second component. The first component receives a signature from the second component over a line of the interface concurrent with READ and WRITE operations over the interface. The latency associated with transmission of a signature from the second component to the first component is the time taken for the second component to compute a signature. The signature received is compared to a signature stored by the first component. Both signatures correspond to a particular READ or WRITE command. Based on the comparison, the first component determines whether the READ or WRITE operation was successful, and directs the second component as necessary.

Error detection in high-speed asymmetric interfaces utilizing dedicated interface lines

A method, system, and computer program product are provided for adjusting write timing in a memory device based on results of an error detection function. For instance, the method can include determining a write timing window between a signal on a data bus and a write clock signal based on the results of the error detection function. The method can also include adjusting a phase difference between the signal on the data bus and the write clock signal based on the write timing window. The memory device can recover data on the data bus based on the adjusted phase difference.

Adjustment of write timing based on error detection techniques

A method and system for performing byte-writes are described, where byte-writes involve writing only particular bytes of a multiple byte write operation. Embodiments include mask data that indicates which bytes are to be written in a byte-write operation. No dedicated mask pin(s) or dedicated mask line(s) are used. In one embodiment, the mask data is transmitted on data lines and store in response to a write_mask command. In one embodiment, the mask data is transmitted as part of the write command.

Write data mask method and system

A method, system, and computer program product are provided for adjusting write timing in a memory device based on a training signal. For instance, the method can include configuring the memory device in a training mode of operation. The method can also include determining a write timing window between a signal on a data bus and a write clock signal based on the training signal. Further, the method includes adjusting a phase difference between the signal on the data bus and the write clock signal based on the write timing window. The memory device can recover data on the data bus based on the adjusted phase difference.

Adjustment of write timing based on a training signal

A system and method for detecting errors in high-speed asymmetric interfaces are described. Embodiments include transmitting digital data between a first system component and a second system component over a bidirectional interface, wherein the first component is significantly more intelligent than the second component. The first component controls many operations of the second component, including receiving a signature from the second component over an existing line of the interface. The signature received is compared to a signature stored by the first component. Both signatures correspond to a transaction over the interface. Based on the comparison, the first component determines whether the transaction was successful, and directs the second component as necessary.

Error detection in high-speed asymmetric interfaces

A circuit includes a complementary current mode logic driver circuit and a dual feedback current mode logic bias circuit. The complementary current mode logic driver circuit provides a first output voltage and a second output voltage. The dual feedback current mode logic bias circuit includes a first feedback circuit and a second feedback circuit. The first feedback circuit provides a first bias voltage for the complementary current mode logic driver circuit in response to the first output voltage. The second feedback circuit provides a second bias voltage in response to the second output voltage.

Bias circuit for a complementary current mode logic drive circuit

Circuit and method to control slew rate of a current-mode logic output driver

Embodiments include implementing a phase detector for a delay-locked loop (DLL) circuit that is operable to detect substantially 270 degree and substantially 540 degree phase differences between two clock signals. In an embodiment, a DLL circuit comprises a delay line receiving a system clock signal and generating phase shifted clock signals, a phase detector receiving the system clock signal and phase shifted clock signal, and configured to generate corresponding up and down signals upon detection of a phase shift of substantially 270 degrees between the system clock signal and the phase shifted clock signal, a charge pump coupled to the phase detector, and configured to receive the up and down signals and generate a control signal responsive to thereto, and a regulator circuit to receive the control signal from the charge pump and generate a voltage control signal to the delay chain to control delay of the system clock signal.

Phase detector circuit for automatically detecting 270 and 540 degree phase shifts

A method, system, and computer program product are provided for adjusting write timing in a memory device based on a command protocol. For instance, the method can include enabling a write clock data recovery (WCDR) mode of operation. The method can also include transmitting WCDR data from a processing unit to the memory device during the WCDR mode of operation and another mode of operation of the memory device. Based on a phase shift in the WCDR data, a phase difference between a signal on a data bus and a write clock signal can be adjusted. Further, the method can include transmitting the signal on the data bus based on the adjusted phase difference between the signal on the data bus and the write clock signal.

Embodiments described herein include a method and system for synchronizing clocks between coupled integrated circuits (ICs) in a computer system. According to an embodiment, a dedicated timing pin is provided on a first IC. The first IC configures a second IC to change a pin assignment, so that the second IC interprets a signal sent on the timing pin by the first IC and received on the reassigned pin as a request to transmit a return signal. The return signal is received on the timing pin. The return signal is used to determine whether timing should be adjusted by the first IC. In an embodiment a clock and data recover (CDR) circuit compares the signal sent to the signal received in order to make the determination. In an embodiment the first IC is a processor-based device, and the second IC is a memory device controlled by the first device.

Growing community of inventors

San Jose, CA, United States of America

Ming-Ju Edward Lee