Western Digital (Fremont), Inc.

Hitachi Global Storage Technologies Netherlands B.v.

Western Digital Technologies, Inc.

Hgst Netherlands, B.v.

Hitachi Global Technologies Netherlands B.v.

Hitachi Global Storage Technologies B.v.

Ming Jiang

Hung-Chin Guthrie

Changqing Shi

Ming Mao

Yi Zheng

Guanghong Luo

Ronghui Zhou

Aron Pentek

Sue Siyang Zhang

Chih-Ching Hu

Yung-Hung Wang

Chen-jung Chien

Feng Q Liu

Daniele Mauri

Ming Sun

Jinqiu Zhang

Yuankai Zheng

Wen-Chien David Hsiao

Dujiang Wan

Danning Yang

Yimin Hsu

Yun-Fei Li

Xiaoyu Yang

Lily Yao

Ying Hong

Yinshi Liu

Jose Antonio Medina

Vladimir Nikitin

John Jaekoyun Yang

Masahiro Osugi

Lijie Guan

Edward Hin Pong Lee

Christian Kaiser

Hai Sun

Amanda Baer

Yunfei Li

Xiaotian Zhou

Yeak-Chong Wong

Jian-Huei Feng

Zhitao Diao

Jyh-Shuey Jerry Lo

Lien-Chang Wang

Michael R Feldbaum

Xiaojun Zhang

Tiffany Yun Wen Jiang

Zeyu Ma

Yifan Zhang

Nick Lara

Zhigang Bai

Lei Wang

Hong Zhang

Ge Yi

Hamid Balamane

Ning Shi

Tsung Yuan Chen

Guanxiong Li

Donghong Li

Daniel Wayne Bedell

Peng Luo

Dehua Han

Carlos Corona

Hieu Lam

Jinwen Wang

Xiaohai Xiang

Yunxiao Gao

Jian X Shen

Clayton R Newman

Quang Le

Kim Yang Lee

Neil Leslie Robertson

Jordan Asher Katine

Petrus Antonius Van Der Heijden

Wipul Jayasekara

Yan Chen

Satoru Araki

John David Westwood

Wei Gao

Donald Giles Allen

Yukimasa Okada

Matthew A Stevenson

Anup Roy

Ming Zhao

Christian Rene Bonhote

Katalin Pentek

Wai-Ming Johnson Kan

Weimin Si

Yanfeng Chen

Shawn M Tanner

Jane Ang

Goncalo Marcos Baião De Albuquerque

Goncalo Baiao De Albuquerque

Wencheng Su

Lijie Zhao

Christopher William Bergevin

El-Amine Salhi

Jerome S Marcelino

Hongmei Han

Keith Y Sasaki

Xhavin Sinha

Tom King Harris, Iii

A write pole of a write head of a hard disk drive can be manufactured by forming a photoresist layer over a magnetic material layer located over a substrate, disposing a tri-tone lithographic mask over the photoresist layer, lithographically exposing the photoresist layer through the lithographic mask, developing the photoresist layer to form a patterned photoresist layer, and patterning the magnetic material layer into the write pole by removing portions of the magnetic material layer that are not covered by the photoresist layer. The tri-tone lithographic mask includes a patterned opaque material layer and a patterned partially-transparent material layer located over a transparent substrate. The patterned opaque material layer includes a uniform width region and a flare region. The patterned partially-transparent material layer includes a pair of partially-transparent strips extending adjacent to a respective edge of the patterned opaque material layer, and partially-transparent assist bars.

Method of making a hard disk drive write pole using a tri-tone attenuated phase shift mask

The present disclosure generally relates to a dual free layer two dimensional magnetic recording read head. The read head comprises a first lower shield, a first sensor disposed over the first lower shield, a first upper shield disposed over the first sensor, a read separation gap (RSG) disposed on the first upper shield, a second lower shield disposed over the RSG, a second sensor disposed over the second lower shield, and a second upper shield disposed over the second sensor. In some embodiments, the second lower shield comprises a CoFeHf layer. In another embodiment, the second lower shield is a synthetic antiferromagnetic multilayer comprising a first shield layer, a second shield layer, and a CoFe/Ru/CoFe anti-ferromagnetic coupling layer or a Ru layer disposed therebetween, the first and second shield layers comprising NiFe and CoFe. In yet another embodiment, the second lower shield comprises layers of Ru, IrMn, and NiFe.

Middle shields two-dimensional magnetic recording read heads

The present disclosure generally relates to a dual free layer two dimensional magnetic recording read head. The read head comprises a first lower shield, a first sensor disposed over the first lower shield, a first upper shield disposed over the first sensor, a read separation gap (RSG) disposed on the first upper shield, a second lower shield disposed on the RSG, a second sensor disposed over the second lower shield, and a second upper shield disposed over the second sensor. In one embodiment, the RSG comprises SiOand has a thickness of about 7 nm to about 14 nm. The SiOisolates the first sensor from the second sensor, and is a chemical mechanical processing (CMP) stop layer. In another embodiment, the RSG comprises a first sublayer comprising AlOx and a second sublayer comprising SiO. The thicknesses of the first and second sublayers are based on an adjustable capacitance.

Produce thinner DTS and adjustable capacitance for TDMR heads

A two-dimensional magnetic recording (TDMR) read head includes a lower reader and an upper reader. Each of the lower reader and the upper reader may have a dual free layer (DFL) magnetic tunnel junction structure having first and second free layers located between lower and upper shields. A synthetic antiferromagnetic (SAF) structure is located on a side of each magnetic tunnel junction. A sidewall insulating layer is located between the lower soft bias layer of the SAF structure and the first free layer. The sidewall insulating layer can have a reduced height such that an upper soft bias layer of the SAF structure is in direct contact with a sidewall of the second free layer, or the upper portion of the sidewall insulating layer located between the upper soft bias layer of the SAF structure and the sidewall of the second free layer has a reduced thickness.

Dual free layer read head having recessed sidewall insulator layer and method of making thereof

The present disclosure generally relate to a read head and methods of forming thereof. Upon forming a dual free layer (DFL) sensor and a rear hard bias (RHB) structure on a seed layer, a photoresist is deposited on the DFL read head and the RHB structure. A refill layer is deposited on the photoresist and the seed layer adjacent to the DFL sensor and the RHB structure. Portions of the refill layer disposed on one or more sidewalls of the photoresist are removed, and a SiOx cap layer is deposited on the refill layer and on the one or more sidewalls. The photoresist is removed, and the SiOx cap layer and top surfaces of the DFL sensor and the RHB structure are planarized to form a substantially flat topography. The SiOx cap layer acts as a stop layer for the refill layer, and remains in the finished read head.

DFL read head with SiOx cap layer on AlOx refill layers

The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different resistance area as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge array is non-zero.

Magnetic sensor array with different RA TMR film

A tunneling magnetoresistance (TMR) sensor device is disclosed that includes four or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first, second, third, and fourth TMR resistors are disposed in the same plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to the magnetization of a free layer, but opposite to the magnetization direction of the reference layer of the first TMR film.

Magnetic sensor with dual TMR films and the method of making the same

A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first and fourth TMR resistors are disposed in a first plane while the second and third TMR resistors are disposed in a second plane different than the first plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction of a free layer.

High sensitivity TMR magnetic sensor

The present disclosure generally relates to a Wheatstone bridge array comprising TMR sensors and a method of fabrication thereof. In the Wheatstone bridge array, there are four distinct TMR sensors. The TMR sensors are all fabricated simultaneously to create four identical TMR sensors that have synthetic antiferromagnetic free layers as the top layer. The synthetic antiferromagnetic free layers comprise a first magnetic layer, a spacer layer, and a second magnetic layer. After forming the four identical TMR sensors, the spacer layer and the second magnetic layer are removed from two TMR sensors. Following the removal of the spacer layer and the second magnetic layer, a new magnetic layer is formed on the now exposed first magnetic layer such that the new magnetic layer has substantially the same thickness as the spacer layer and second magnetic layer combined.

Magnetic sensor array with one TMR stack having two free layers

A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR sensors. The TMR sensor device comprises a first resistor comprising a first TMR film, a second resistor comprising a second TMR film different than the first TMR film, a third resistor comprising the second TMR film, and a fourth resistor comprising the first TMR film. The first TMR film comprises a reference layer having a first magnetization direction anti-parallel to a second magnetization direction of a pinned layer. The second TMR film comprises a reference layer having a first magnetization direction parallel to a second magnetization direction of a first pinned layer, and a second pinned layer having a third magnetization direction anti-parallel to the first magnetization direction of the reference layer and the second magnetization direction of the first pinned layer.

Magnetic sensor array with dual TMR film

Embodiments of the present disclosure generally relate to a sensor of magnetic tunnel junctions (MTJs) with shape anisotropy. In one embodiment, a tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration includes at least one magnetic tunnel junctions (MTJ). The MTJ includes a free layer having a first edge and a second edge. The free layer has a thickness of about 100 &#x212b; or more. The free layer has a width and a height with a width-to-height aspect ratio of about 4:1 or more. The MTJ has a first hard bias element positioned proximate the first edge of the free layer and a second hard bias element positioned proximate the second edge of the free layer.

TMR sensor with magnetic tunnel junctions with shape anisotropy

The present disclosure is generally related to a magnetic media drive employing a magnetic recording head. The magnetic recording head comprises a main pole and a wrap-around shield surrounding at least two sides of the main pole at a media facing surface. The wrap-around shield comprises an electroplated, laminated NiFeX film, where X is one of Re, Cr, or Ir. The NiFeX film comprises about 1 atomic percent to about 12 atomic percent of X, about 30 atomic percent to about 50 atomic percent of Ni, and balance of Fe. The NiFeX film comprises a plurality of layers, each layer comprising a first sublayer having a Re content of about 1 atomic percent to about 43 atomic percent and a second sublayer having a Re content of about 0 atomic percent to about 12 atomic percent. The NiFeX film increases the damping constant of the magnetic recording head.

Magnetic recording head having a wrap-around shield comprising a laminated film and a magnetic recording device comprising the magnetic recording head

A Wheatstone bridge array comprising a tunneling magnetoresistive (TMR) sensor and a method for manufacturing is disclosed. The bottom lead for the TMR sensor has a very small surface roughness due to not only chemical mechanical planarization (CMP) but also due to forming the bottom lead from multiple layers. The multiple layers include at least a bottom first metal layer and a top second metal layer disposed on the first metal layer. The second metal layer generally has a lower surface roughness than the first metal layer. Additionally, the second metal layer has a slower polishing rate. Therefore, not only does the second metal layer reduce the surface roughness simply be being present, but the slower polishing rate enables the top second metal film to be polished to a very fine surface roughness of less than or equal to &#x2dc;2 Angstroms.

Bottom leads chemical mechanical planarization for TMR magnetic sensors

The present disclosure generally relates to a Wheatstone bridge that includes a plurality of resistors comprising dual free layer (DFL) TMR structures. The DFL TMR structures include one or more hard bias structures on the side of DLF. Additionally, one or more soft bias structures may also be present on a side of the DFL. Two resistors will have identical hard bias material while two other resistors will have hard bias material that is identical to each other, yet different when compared to the first two resistors. The hard bias materials will provide opposite magnetizations that will provide opposite bias fields that result in two different magnetoresistance responses for the DFL TMR.

Dual free layer TMR magnetic field sensor

The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of tunneling magnetoresistance (TMR) structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures each have an additional non-TMR resistor as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.

Magnetic sensor with serial resistor for asymmetric sensing field range

Growing community of inventors

San Jose, CA, United States of America

Ming Jiang