Atlantic Richfield Company

Siemens Solar Industries

Ming-Jau Yin

David P Tanner

Theresa L Jester

A semiconductor device having a thin film silicon-containing active layer and a metallic first electrode is provided with an interfacial metallic layer at an inner surface of a second electrode to increase electrical resistance and thereby reduce shunts adjacent pinhole-type defects of the active layer. The interfacial layer is preferably made of a metal selected from the group consisting of tin, gold, titanium, palladium and tantalum.

Semiconductor device with interfacial electrode layer

A solar module of the type having at least two series connected solar cells which each include a transparent front-face electrode, a thin film photovoltaic device, and an aluminum back contact. A nickel film is provided over the aluminum back contact to provide improved resistance to degradation.

Growing community of inventors

Thousand Oaks, CA, United States of America

Ming-Jau Yin