Texas Instruments Corporation

Micron Technology Incorporated

Ming-Jang Hwang

Jiong-Ping Lu

Cecil J Davis

William R McKee

Mehrdad M Moslehi

Wei-Yung Hsu

Robert T Matthews

Gonzalo Amador

Katherine G Heinen

Leslie Edward Stark

Chi-Cheong Shen

Robert Yung-Hsi Tsu

Dirk N Anderson

Wei William Lee

Paul Joseph Hundt

Kwan Yew Kee

Phillip Chapados, Jr

August J Fischer

Jing Shing Shu

Kevin Dennis

Steve K Groothuis

High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides. The resulting film is useful as a capacitative cell and resists oxygen diffusion to the underlying material, has high capacitance and low current leakage.

Method of forming capacitors

High-K dielectric materials and processes for manufacturing them

High-k dielectric materials and processes for manufacturing them

In situ nitridation of a thin layer of either silicon or tungsten provides an adhesive layer for bulk deposition of tungsten. Alternatively, a thin layer of silicon can be deposited directly on a dielectric, then reacted with WF6 to replace the silicon with tungsten, which provides a nucleation layer for bulk tungsten deposition.

Methods for chemical vapor deposition of tungsten on silicon or dielectric

A conducting plug/contact structure for use with integrated circuit includes a tungsten conducting plug formed in the via with a tungsten-silicon-nitride (WSi N ) region providing the interface between the tungsten conducting plug and the substrate (silicon) layer. The interface region is formed providing a nitrided surface layer over the exposed dielectric surfaces and the exposed substrate surface (i.e., exposed by a via in the dielectric layer) prior to the formation of tungsten/tungsten nitride layer filling the via. The structure is annealed forming a tungsten conducting plug with a tungsten-silicon-nitride interface between the conducting plug and the substrate. According to another embodiment, a tungsten nitride surface layer is formed over the nitrided surface layer prior to the formation of a tungsten layer to fill the via. According to another embodiment, a silicon surface layer is applied to the exposed surface of the dielectric layer and to the exposed surface of the substrate prior to formation of the nitrided surface layer. A layer of tungsten, tungsten/tungsten nitride, or tungsten nitride is formed to fill the via. After annealing, a tungsten conducting plug is formed with a tungsten-silicon-nitride interface region with the substrate.

Process for high thermal stable contact formation in manufacturing sub-quarter-micron CMOS devices

An embodiment of the instant invention is a method of depositing a TiN-based film over a semiconductor wafer, the method comprising the steps of: substantially simultaneously subjecting the semiconductor wafer to TiCl , H , and N ; and subjecting the semiconductor wafer to a plasma, such that the combination of the TiCl , H , and N and the plasma cause the deposition of a TiN based film to form over the semiconductor wafer. Another embodiment of the instant invention involves additionally subjecting the semiconductor wafer to SiH so as to form a TiSi N film over the semiconductor wafer. Another embodiment of the instant invention involves additionally subjecting the semiconductor wafer to B H so as to form a TiN B layer over the semiconductor wafer.

Process for depositing thin films containing titanium and nitrogen

In integrated semiconductor manufacturing, semiconductor dies may be packaged in ceramic packages. Such packages typically have a base into which the semiconductor die is placed and typically have a lid which seals the package. A halagen lamp radiant chamber significantly reduces the time it takes to seal the package.

Radiant chamber and method for lid seal in ceramic packaging

In integrated semiconductor manufacturing, semiconductor dies may be packaged in ceramic packages. Such packages typically have a base into which the semiconductor die is securedly placed and typically have a lead frame securedly attached to base so that electrical connection may be made to the semiconductor die. A halagen lamp radiant chamber significantly reduces the time it takes to attach the die and lead frame to the ceramic base while reducing particles commonly associated with open belt converyor furnaces.

Radiant chamber for simultaneous rapid die attach and lead frame embed for ceramic packaging

A method for forming a semiconductor memory device storage cell structure having an increased surface area. The storage cell structure has one or more rough polysilicon surfaces formed by depositing the polysilicon under conditions that result in gas phase dominant nucleation.

In-situ doped rough polysilicon storage cell structure formed using gas

This is a curing method of low-k dielectric material in a semiconductor device and system for such. The method may comprise: depositing metal interconnection lines; depositing the low-k dielectric material layer over the lines; and curing the low-k dielectric material layer with a heating lamp for less than 10 minutes, wherein the heating lamp provides optical radiation energy in the infrared spectral range of about 1 micron to 3.5 microns in wavelength. The heating lamp may be a tungsten-halogen lamp.

High throughput optical curing process for semiconductor device

A glass heating and sealing system (10, 30, 60) and method for manufacturing a flat panel display including anode and cathode glass panels with a vacuum compartment between them includes a plurality of vacuum chambers (12, 14, 16, 18, 20, 32, 34, 36, 38, 61, 76) for processing glass panels (39, 63, 74). Transfer of glass panels (39, 63, 74) between chambers (12, 14, 16, 18, 20, 32, 34, 36, 38, 61, 76) is accomplished by a transfer mechanism (24, 42, 68, 72) located within a central vacuum chamber (22, 40, 70) commonly connected to the other chambers. System (10, 30, 60) may include a rapid thermal processing (RTP) chamber (14, 34, 38, 76) for quick and even heating of the panels (39, 63, 74). System (10) includes an e-beam bombardment chamber (16) for preconditioning the anode glass panels, and a heating chamber (18) for fusing anode glass panels to cathode glass panels. Different levels of vacuum may be established in different chambers.

Growing community of inventors

Dallas, TX, United States of America

Ming-Jang Hwang