Uwiz Technology Co., Ltd.

Ming-Hui Lu

Song-Yuan Chang

Wen-Tsai Tsai

Yun-Lung Ho

Po-Yuan Shen

Chung-Wei Chiang

Ming-Che Ho

Ho-Ying Wu

Wen-Jsai Jsai

Yu-Chi Fu

Wei-Jung Chen

Provided is a slurry composition including abrasive particles, halogen oxide, and nitroxide compound. The combination of halogen oxide and nitroxide compound has a synergistic effect to remove a substrate containing tungsten and silicon oxide. Moreover, a use of the slurry composition and a polishing method using the slurry composition are provided.

Method of selectively removing tungsten over silicon oxide

A cleaning composition is provided. The cleaning composition includes at least one polyamino-polycarboxylic acid or at least one salt thereof, at least one solvent, at least one substituted or non-substituted phenethylamine and water. The solvent is selected from a group consisting of glycols.

Cleaning composition and cleaning method using the same

Provided is a polishing slurry composition, including a non-ionic surfactant represented by the following formula (1)R&#x2014;(OCHCH)&#x2014;OH&#x2003;&#x2003;formula (1)wherein x is an integer from 1 to 50, and R is selected from a group consisting of a C3-C50 alkyl group, a C6-C55 benzylalkyl group and a C6-C55 phenylalkyl group.

Polishing slurry composition

A slurry composition has an amount of 100% and includes abrasives, an acid-base pH adjustor, an oxidant and water. A content of the abrasives is 10 wt % to 40 wt %, and a polydisperse index of the abrasives sizes is greater than 1.8. A content of the acid-base pH adjustor is 0.01 wt % to 10 wt %. A content of the oxidant is 0.01 wt % to 10 wt %. A remaining portion of the slurry composition is water.

Slurry composition and method of fabricating damascene structure using the same

A silica having metal ions absorbed thereon and a fabricating method thereof are provided. The silica having metal ions absorbed thereon is a silica having metal ions absorbed thereon and being modified with persulfate salt. The method includes following steps. A solution is provided, and the solution includes silica and persulfate salt therein. The solution is heated to react the silica with the persulfate salt, so as to obtain silica modified with persulfate salt. Metal ion source is added in the solution, the metal ion source dissociates metal ions, and the silica modified with persulfate salt absorbs the metal ions to obtain the silica having metal ions absorbed thereon.

Silica having metal ions absorbed thereon and fabricating method thereof

An acidic post-CMP cleaning composition includes at least one polyamino-polycarboxylic acid, or salt thereof; at least one hydroxycarboxylic acid, or salt thereof; and the remainder being substantially water. The acidic cleaning composition also includes a surfactant. The acidic post-CMP cleaning composition has a pH of 1 to 5, and is useful for removing the contaminants from the wafer surface after a CMP process without making roughness worse.

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Taipei, Taiwan

Ming-Hui Lu