Taiwan Semiconductor Manufacturing Comp. Ltd.

Ming-Hui Li

Ming-Ying Tsai

Chia-Cheng Liu

Ta-wei Sung

Ming-Hsien Wu

Po-Yi Tseng

Shen-Han Lin

Chih-Wen Huang

Stanley Chang

Chang-Chun Wu

A semiconductor structure includes a gate structure over a substrate. The semiconductor structure includes an inter-layer dielectric (ILD) over the substrate, wherein an upper portion of the ILD has a higher concentration of silicon atoms than a bottom portion of the ILD.

Semiconductor structure including inter-layer dielectric

An ion implanting method includes providing a gas having a bonding energy ranged from about 220 kJ/mol to about 450 kJ/mol; ionizing the gas to form a plurality of types of ions; and directing at least one of the types of the ions to implant a substance. The gas includes at least one of NH, CHNH, CHNH, CFCland C(CH3)F.

Ion implanting method

A method of fabricating a semiconductor structure. The method includes forming a sacrificial gate structure, depositing a dielectric material, and implanting the dielectric material using a silicon cluster gas. The silicon cluster gas has two or more silicon atoms.

Semiconductor structure and fabrication method therefor

Embodiments of a method for generating ions in an ion source are provided. The method for generating ions in an ion source includes introducing a dopant gas and a diluent gas into an ion source arc chamber. The method for generating ions in an ion source further includes generating plasma in the ion source arc chamber based on the dopant gas and the diluent gas. In addition, the dopant gas includes carbon monoxide, and the diluent gas includes xenon and hydrogen.

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Taichung, Taiwan

Ming-Hui Li