Industrial Technology Research Institute

Ming-Huang Hong

Chao-Nien Huang

Chin-Yuan Chen

Kwang-Kuo Shih

Biing-Jye Lee

Fei-Chang Hwang

Eric G Lean

Man-Fung Huang

A laser diode for digital versatile disks or other purposes and its fabricating method are disclosed. The fabrication does not require any regrowth steps during the MOCVD process or the formation of nitride or oxide to serve as dielectrics, thus significantly simplifying the fabrication process. Further, the laser diode can operate with a relatively low threshold current due to its excellent current confinement. The laser diode for digital versatile disk is made of AlGaInP alloy, in which a layer of Al,Ga,As, where x>0.8, is formed between the AlGaInP cladding layers. The layer of Al,Ga,As is then oxidized in a hot vapor atmosphere to form AlO,that has at least one opening formed thereon. The AlO,layer serves as a current confinement layer and can provide excellent current confinement. The AlO,layer can also serve as a dielectric layer in the ridge structure.

Laser diode for digital versatile disks and method of fabricating the same

A white light-emitting diode and a method of fabricating the same diode are disclosed. The white light-emitting diode is fabricated by epitaxy, which can produce two peaks in the spectrum at the P-N junction by appropriately adjusting epitaxial parameters such as temperature, pressure, NH.sub.3 flux and the ratio of H.sub.2 to N.sub.2 or the concentration of dopant, such as Mg or Si. The diode can thus radiate white light by adjusting the wavelength and the intensity of the principal peak in the two peaks. Further, quantum well structure can be formed in the diode. By appropriately adjusting the epitaxial parameters, the spectrum of the quantum well structures may have more than one peak. Therefore, white light can be generated by combining the light with wavelengths at two or three different peaks. The white LED can radiate white light itself and need not involve combining many LEDs, so that the cost and the difficulty of fabricating the white LED lamp can be reduced. Moreover, the white LED can radiate white light itself, and does not need to excite fluorescent material to radiate white light. Accordingly, the lifetime of the white LED lamp is not limited by the relatively short lifetime of fluorescent material.

White light-emitting diode and method of manufacturing the same

A method for forming P-type gallium nitride is disclosed in the invention. In this method, Mg--H can be completly discomposed by use of an annealing process, thereby entirely dissociating the hydrogen atoms from the gallium nitride, while the nitrogen atoms are not dissociated from the gallium nitride. Therefore, the P-type gallium nitride having high conductivity is obtained and V.sub.N gap defects created in the gallium nitride do not occur. During the annealing process, nitrogen flux is added around the gallium nitride to prevent decomposition of the gallium nitride. The above-mentioned nitrogen flux can be generated by use of RF plasma, electron cyclotron resonance (ECR) or ion beam. Furthermore, since a forward current is provided across the P--N junction of the gallium nitride, the Mg--H inside the magnesium-doped gallium nitride can be decomposed by just increasing the temperature to 175.degree. C. Therefore, in the invention, when a diode structure is manufactured with gallium nitride, the hydrogen atoms can be dissociated from the gallium nitride in a low-temperature process, thereby activating the magnesium (acceptor), such that the conductivity of the P-type gallium nitride is further increased and V.sub.N gap defects caused by a high-temperature process are prevented.

Method for forming P-type gallium nitride

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Hsinchu, Taiwan

Ming-Huang Hong