Taiwan Semiconductor Manufacturing Comp. Ltd.

Powerchip Semiconductor Manufacturing Corporation

Ming-Hsun Tsai

Li-Jui Chen

Shang-Chieh Chien

Cheng-Hsuan Wu

Heng-Hsin Liu

Yu-Huan Chen

Wei-Shin Cheng

Cheng-Hao Lai

Yu-Kuang Sun

Yu-Fa Lo

Hsin-Feng Chen

Chiao-Hua Cheng

Yen-Hsun Chen

Han-Lung Chang

Shao-Hua Wang

Sheng-Kang Yu

Po-Chung Cheng

Chia-Chen Chen

Shih-Yu Tu

Jou-Hsuan Lu

Yu-Chih Huang

Ping-Cheng Li

Chun-Lin Lu

Shou-Zen Chang

Chi Ming Yang

Hsiao-Lun Chang

Shang-Ying Wu

Wei-Chun Yen

Ying-Tsung Chu

Yung-Teng Yu

A photolithographic apparatus includes a droplet generator, a droplet generator maintenance system, and a controller communicating with the droplet generator maintenance system. The droplet generator maintenance system operatively communicates with the droplet generator, a coolant distribution unit, a gas supply unit, and a supporting member. The gas supply unit includes a heat exchange assembly and an air heating assembly. The coolant distribution unit is configured to control the temperature of the droplet generator within the acceptable droplet generator range.

Methods of servicing photolithographic apparatus

A wafer structure and a manufacturing method thereof are provided. The wafer structure includes a substrate structure, a first dielectric layer, multiple test pads, a second dielectric layer, and multiple bond pads. The first dielectric layer is disposed on the substrate structure. The test pads are disposed in and exposed outside the first dielectric layer. Each test pad has a probe mark. The second dielectric layer is disposed on the first dielectric layer. The second dielectric layer has a top surface away from the test pads. Multiple bond pads are disposed in and exposed outside the second dielectric layer. Each bond pad is electrically connected to the corresponding test pad. The bond pads have bonding surfaces away from the test pads. The bonding surfaces are flush with the top surface. In the normal direction of the substrate structure, each bond pad does not overlap the probe mark of the corresponding test pad.

Wafer structure including probe marked test pads

Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.

EUV photolithography system fuel source and methods of operating the same

An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.

Method and system for generating droplets for EUV photolithography processes

A particle removal device, along with methods of using such, are described. The device includes a handheld module having a body. A first one or more channels and a second one or more channels are formed in the body. The body includes a nozzle, and the handheld module is configured to provide suction by the nozzle and to inject an ionized fluid stream by the nozzle. The body further includes a handle attached to the nozzle.

Particle removal device and method

A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. In some embodiments, a nozzle tube is arranged within the nozzle of the droplet generator, and the nozzle tube includes a structured nozzle pattern configured to provide an angular momentum to the target droplets.

Apparatus and method for generating extreme ultraviolet radiation

A method for using an extreme ultraviolet radiation source is provided. The method includes performing a lithography process using an extreme ultraviolet (EUV) radiation source; after the lithography processes, inserting an extraction tube into a vessel of the EUV radiation source; and cleaning a collector of the EUV radiation source by using the extraction tube.

Method for using radiation source apparatus

In a method of inspecting an extreme ultraviolet (EUV) radiation source, during an idle mode, a borescope mounted on a fixture is inserted through a first opening into a chamber of the EUV radiation source. The borescope includes a connection cable attached at a first end to a camera. The fixture includes an extendible section mounted from a first side on a lead screw, and the camera of the borescope is mounted on a second side, opposite to the first side, of the extendible section. The extendible section is extended to move the camera inside the chamber of the EUV radiation source. One or more images are acquired by the camera from inside the chamber of the EUV radiation source at one or more viewing positions. The one or more acquired images are analyzed to determine an amount of tin debris deposited inside the chamber of the EUV radiation source.

Inspection tool for an extreme ultraviolet radiation source to observe tin residual

The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.

Droplet generator assembly and method of replacing components

Droplet generator and method of servicing a photolithographic tool

An EUV light source module includes an EUV vessel, a collector disposed in the EUV vessel, a droplet generator, a droplet catcher, and a droplet collecting system. The droplet generator is coupled to the EUV vessel and configured to provide a plurality of target droplets into the EUV vessel. The droplet catcher is coupled to the EUV vessel and configured to catch at least a target droplet from the EUV vessel. The droplet colleting system is coupled to the droplet catcher. The droplet collecting system includes a connecting port coupled to the droplet catcher, and a thermal insulating device surrounding the droplet catcher. The droplet generator and the droplet catcher are disposed at opposite locations in the EUV vessel.

Droplet collecting system and method of using the same

An extreme ultraviolet radiation source apparatus includes a chamber including at least a droplet generator, a nozzle of the droplet generator, and a dry ice blasting assembly. The droplet generator includes a reservoir for a molten metal, and the nozzle has a first end connected to the reservoir and a second opposing end where molten metal droplets emerge from the nozzle. The dry ice blasting assembly includes a blasting nozzle, a blasting air inlet and a blaster carbon dioxide (CO) inlet. The blasting nozzle is disposed inside the chamber. The blasting nozzle is arranged to direct a pressurized air stream and dry ice particles at the nozzle of the droplet generator.

Droplet generator and method of servicing extreme ultraviolet radiation source apparatus

Some implementations described herein provide techniques and apparatuses for an extreme ultraviolet (EUV) radiation source that includes a backsplash-prevention system to reduce, minimize, and/or prevent the formation of tin (Sn) build-up in a tunnel structure of a collector flow ring that might otherwise be caused by the accumulation of Sn satellites. This reduces backsplash of Sn onto a collector of the EUV radiation source, increases the operational life of the collector (e.g., by increasing the time duration between cleaning and/or replacement of the collector), reduces downtime of the EUV radiation source, and/or enables the performance of the EUV radiation source to be sustained for longer time durations (e.g., by reducing, minimizing, and/or preventing the rate of Sn contamination of the collector), among other examples.

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Hsinchu, Taiwan

Ming-Hsun Tsai