Taiwan Semiconductor Manufacturing Comp. Ltd.

Ming Hsing Tsai

Syun-Ming Jang Jang

Hung-Wen Su

Chun-Chieh Lin

Chien-An Chen

Wen-Jiun Liu

Shaulin Shue

Winston Sue

Chung Liang Chang

A method of forming a conductive structure includes forming a first opening and a second opening in a dielectric layer on a substrate, wherein the first opening is narrower than the second opening. The method further includes depositing a diffusion barrier layer to line the first opening and the second opening. The method further includes forming a metal layer over the diffusion barrier layer to fill at least portions of the first opening and the second opening, wherein a maximum thickness of the metal layer in the first opening is greater than a maximum thickness of the metal layer in the second opening.

Mechanisms of forming damascene interconnect structures

A metal filled damascene structure with improved electromigration resistance and method for forming the same, the method including providing a semiconductor process wafer comprising damascene openings; and, depositing metal and at least one metal dopant according to an ECD process to from a metal filled damascene comprising a doped metal alloy portion.

Metal interconnect features with a doping gradient

A method for forming a damascene structure over tungsten plugs using nitridation of said tungsten plugs to provide better oxidation resistance, better adhesion properties and better copper diffusion barrier proerties. The process begins by providing a substrate structure having at least one device layer thereon and having a first dielectric layer overlying the device layer. The dielectric layer has tungsten plugs therein providing a conductive path between the surface of the dielectric layer and the device layer. The tungsten plugs are nitriduzed to form a WN,layer on top of the tungsten plugs. A second dielectric layer is deposited over the WNx layer and the first dielectric layer. The second dielectric layer is patterned to form a trench in the second dielectric layer; whereby the WN,layer is exposed in the trench. A barrier layer is formed in the trench. A metal layer is formed over the barrier layer. The metal layer and the second dielectric layer are planarized to form a damascene structure.

Method for forming a copper damascene structure over tungsten plugs with improved adhesion, oxidation resistance, and diffusion barrier properties using nitridation of the tungsten plug

Growing community of inventors

Chu-Pei, Taiwan

Ming Hsing Tsai