Taiwan Semiconductor Manufacturing Comp. Ltd.

Global Unichip Corporation

Ming-Hsien Tsai

Fu-Lung Hsueh

Hsin-Yu Pan

Sen-Kuei Hsu

Chun-Yu Lin

Chewn-Pu Jou

Tzu-Jin Yeh

Shang-Ying Tsai

Shih-Ming Yang

Jheng-Yuan Wang

Ming-De Chen

Ming-Hsiang Song

Li-Wei Chu

Hsieh-Hung Hsieh

Hung-Jen Liao

Huan-Neng Chen

Jiun-Rong Pai

Chih-Hung Huang

Yang-Ann Chu

Jun-De Jin

Tsung-Sheng Kuo

Sung-Chieh Lin

Hsuan Lee

Wen-Juh Kang

Ting-Hsu Chien

Sa-Lly Liu

Ping-Fang Hung

Jung-Chi Huang

Chung-Wei Fang

Jeng-Hung Tsai

Fan-Ming Kuo

Kai-Wen Wu

Tsun-Lai Hsu

Yao-Fong Dai

Shiang-Yu Tsai

Chew-Pu Jou

Chih-Tung Lo

A package structure includes an insulating encapsulation, a semiconductor die, and a filter structure. The semiconductor die is encapsulated in the insulating encapsulation. The filter structure is electrically coupled to the semiconductor die, wherein the filter structure includes a patterned metallization layer with a pattern having a double-spiral having aligned centroids thereof.

Package structure

A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant.

Thermocouple device

A semiconductor device and method of making same are disclosed. In some embodiments, a method includes: forming a first thermoelectric conduction leg on a substrate; forming a second thermoelectric conduction leg on the substrate to be aligned with the first thermoelectric conduction leg along a same row; forming at least one intermediate thermoelectric conduction structure on an end of the second thermoelectric conduction leg; forming a contact structure to couple the first and second thermoelectric conduction legs via the at least one intermediate thermoelectric conduction structure; and recessing the substrate to form at least one trench substantially adjacent to a respective side edge of either the first thermoelectric conduction leg or the second thermoelectric conduction leg.

A circuit includes a protection circuit and a gate driver coupled to a power supply voltage node configured to have a power supply voltage level. The protection circuit generates a first signal having a first logical voltage level when the power supply voltage level is equal to or greater than a threshold voltage level, and having a second logical voltage level when the power supply voltage level is less than the threshold voltage level. The gate driver receives the first signal and a second signal, and, when the first signal has the first logical voltage level, outputs a third signal based on the second signal, and when the first signal has the second logical voltage level, outputs the third signal having a predetermined one of the first or second logical voltage levels.

Driver circuit and method of operating the same

According to some embodiments, an on-chip diplexer circuit is disclosed. The on-chip diplexer circuit includes a LC resonator module, the LC resonator module further comprises a first port, a first LC resonator unit and a second LC resonator unit; a first filter unit, the first filter unit is electrically connected to the first LC resonator unit in the LC resonator module, and the first filter unit is electrically connected to a second port; and a second filter unit, the second filter unit is electrically connected to the second LC resonator unit in the LC resonator module, and the second filter unit is electrically connected to a third port. According to some embodiments, the first LC resonator unit serves as an impedance matching circuit for a first signal having a first resonant frequency and serves as an open circuit for a second signal having a second resonant frequency that is different from the first resonant frequency; the second LC resonator unit serves as an impedance matching circuit for the second signal having the second resonant frequency and serves as an open circuit for the first signal having the first resonant frequency. The first filter unit passes signals with the first resonant frequency; and the second filter unit passes signals with the second resonant frequency.

On-chip diplexer

A wafer carrier handling apparatus includes a housing, a platform, a moving mechanism and a door storage device. The platform is configured to hold a wafer carrier. The moving mechanism is connected to the housing and configured to move the platform with respect to the housing. The door storage device is disposed above the housing. The door storage device has a first door storage zone. The first door storage zone is configured to allow a door of the wafer carrier to be held thereon.

Wafer carrier handling apparatus and method thereof

A transformer includes first and second semiconductor substrates. The first semiconductor substrate includes a first circuit, a first coil providing a first impedance, and a first capacitor coupled in parallel with the first coil. The second semiconductor substrate includes a second circuit, a second coil providing a second impedance and inductively coupled with the first coil, and a second capacitor coupled in parallel with the second coil.

System and method for inductive wireless signaling

An electromagnetic detection device is provided. The electromagnetic detection device includes an induction coil, a converter, and a controller. The induction coil is utilized to sense an RF signal and generate a sensing RF signal by electromagnetic induction of the induction coil which is proportional to the RF signal. The RF signal is transmitted to a shower head to perform a semiconductor process on a wafer for manufacturing an IC in association with the RF signal. The converter is utilized to convert the sensing RF signal into a DC signal. The controller is utilized to determine whether the semiconductor process is normal or abnormal according to the DC signal during the semiconductor process. The semiconductor process will be terminated when the semiconductor process is determined as abnormal.

Electromagnetic detection device and semiconductor manufacturing system

An electronic device is disclosed that includes a power distribution network, a first resonant network, a second resonant network, and a third resonant network. The power distribution network is configured transmit a voltage. The first resonant network is coupled to a first terminal of the power distribution network, and is configured to provide a first electrostatic discharge (ESD) protection to the power distribution network. The second resonant network is coupled to a second terminal of the power distribution network, and is configured to provide a second ESD protection to the power distribution network. The third resonant network coupled between the first terminal and the second terminal of the power distribution network, and the first resonant network, the second resonant network, and the third resonant network are configured to filter an AC signal from the power distribution network.

Filter with electrostatic discharge protection

An electrostatic discharge (ESD) protection circuit includes a first inductor coupled to an input node configured to receive an input signal and to an output node. A second inductor is coupled to the input node and to a first ESD protection device, and a third inductor is coupled to the output node and to a second ESD protection device.

ESD protection circuits and methods

Growing community of inventors

Sindian, Taiwan

Ming-Hsien Tsai