Taiwan Semiconductor Manufacturing Comp. Ltd.

Ming-Hsiao Hsieh

Hung-Wen Su

Chun-Chieh Lin

Ya-Lien Lee

Chia-Pang Kuo

Chien Chung Huang

Chih-Yi Chang

Wei-Hsiang Chan

A structure includes a first conductive feature in a first dielectric layer; a second dielectric layer over the first dielectric layer; and a second conductive feature extending through the second dielectric layer to physically contact the first conductive feature, wherein the second conductive feature includes a metal adhesion layer over and physically contacting the first conductive feature; a barrier layer extending along sidewalls of the second dielectric layer; and a conductive filling material extending over the metal adhesion layer and the barrier layer, wherein a portion of the conductive filling material extends between the barrier layer and the metal adhesion layer.

Via for semiconductor device and method

Growing community of inventors

Hsinchu, Taiwan

Ming-Hsiao Hsieh