Ite Tech. Inc.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Raydium Semiconductor Corporation

Ming-Heng Tsai

Yi-Chung Chou

Jhon Jhy Liaw

Chih-Hao Chang

Chun-Sheng Liang

Ta-Chun Lin

Hsu-Min Chen

Kuan-Hung Chou

Huang-Chao Chang

Po-Chang Jen

A semiconductor structure includes: a substrate; a first fin and a second fin disposed on the substrate and spaced apart from each other; a dielectric wall disposed on the substrate and having first and second wall surfaces; a third fin disposed on the substrate to be in direct contact with at least one of the first and second fins; a first device disposed on the first fin and including first channel features extending away from the first wall surface; a second device disposed on the second fin and including second channel features extending away from the second wall surface; at least one third device disposed on the third fin and including third channel features; and an isolation feature disposed on the substrate to permit the third device to be electrically isolated from the first and second devices. A method for manufacturing the semiconductor structure is also disclosed.

Semiconductor structure with high integration density and method for manufacturing the same

A semiconductor device is disclosed. The semiconductor device includes a substrate, a well, an oxidation layer, a gate electrode and a shared source/drain electrode. The substrate has a first surface and a second surface opposite to each other. The well is formed in the substrate. The substrate and the well have a first conductivity type and a second conductivity type respectively. The oxidation layer is formed in the well. The gate electrode is formed above the first surface and has a first opening. The shared source/drain electrode is formed near the first surface in the oxidation layer and exposed from the first opening. The shared source/drain electrode has the first conductivity type.

Semiconductor device for increasing capacitance effective area and effective capacitance value

A touch detection method includes outputting a first signal via an output terminal of a processing unit; receiving a second signal via an input terminal of the processing unit where a voltage level of the second signal corresponds to a voltage level of the first signal, a first capacitance of a first capacitor and a second capacitance of a second capacitor; performing a calibration calculation to the variation of voltage level of the second signal by using a calibration parameter for obtaining a calibrated variation; and determining a touch event has been triggered if the calibrated variation has passed a threshold.

Touch detection method of a touch detection device for obtaining a calibrated variation for determining whether a touch event has been triggered

A light-emitting device driving circuit and a method thereof are provided. A terminal of a light-emitting device is coupled to a supply voltage and a cathode of a diode via an inductor, and the other terminal is coupled to an anode of the diode. The light-emitting device driving circuit includes a switch, a current-sensing circuit, and a switch control circuit. The current-sensing circuit is coupled to the anode of the diode via the switch to determine whether or not to generate a turning-off control signal according to a conducting-current value of the switch. The switch control circuit controls an on/off state of the switch, and turns off the switch according to the turning-off control signal. Besides, the switch control circuit compares the conducting-current value with a reference-current value to generate a comparing result to dynamically adjust a time length of turning off the switch accordingly.

Light-emitting device driving circuit for dynamically adjusting turn-off time length of switch

Growing community of inventors

Hsinchu, Taiwan

Ming-Heng Tsai